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IXYS N-Channel IGBT, 50 A Maximum Continuous Collector Current, 1200 V Collector Emitter Voltage, 300 W Power IXGT30N120B3D1
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Model | IXGT30N120B3D1 |
| Mount Type | Through Hole |
| Series | Mid-Frequency |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-268 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 300W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| IXYS IXGT40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-268, Surface MountBrand | IXYS |
Key Features
- This IGBT utilizes a 3-pin TO-268 package designed for through hole mounting.
- It provides a maximum power dissipation of 300 watts, enabling robust operation.
- Maximum gate emitter voltage is 20 V, ensuring reliable gate control.
- The device features a maximum collector emitter saturation voltage of 3.5 V.
- It operates reliably from -55°C to 150°C, suitable for industrial environments.
- The IGBT complies with RoHS standards for hazardous substance restrictions.
- Mid-frequency series suitable for power switching applications.
- The transistor employs an N-type channel configuration for enhanced performance.
Product Description
IXYS IXGT30N120B3D1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a maximum continuous collector current of 50 A and a collector emitter voltage rating of 1200 V. Packaged in a 3-pin TO-268 case, this through hole mounted IGBT is engineered for industrial and power electronics applications requiring efficient and fast switching capabilities.
This device integrates the advantages of MOSFET gate-drive characteristics with the high-current and low saturation voltage benefits of bipolar transistors. The maximum power dissipation of 300 W allows operation under demanding conditions, while the maximum gate emitter voltage rating of 20 V ensures safe gate control.
Operating temperature range spans from -55°C to 150°C, providing reliability in a wide variety of environments including industrial controls and power inverter systems. Its maximum collector emitter saturation voltage is specified at 3.5 V, facilitating efficient power conversion.
The IXGT30N120B3D1 complies with RoHS standards, supporting environmental safety by restricting hazardous substances. This mid-frequency series transistor is ideal for use in motor drives, switching regulators, inverter circuits, and other power management applications.
This IGBT features a 3-pin TO-268 package for through hole mounting. Maximum continuous collector current is rated at 50 A. Collector emitter voltage maximum rating is 1200 V. Maximum power dissipation is 300 W, supporting high load conditions.
Gate emitter voltage rating is 20 V to protect the gate input. Maximum collector emitter saturation voltage of 3.5 V enables low conduction losses. Operating temperature range is -55°C to 150°C for tough industrial use. RoHS compliant for environmental safety and regulatory compliance.
This IGBT is well-suited for industrial, laboratory, construction, HVAC, manufacturing, and other commercial power electronic applications. It offers efficient switching control and robust handling of high currents and voltages. This product is a critical component for engineers and designers focusing on power electronics and motor control systems.
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Frequently Asked Questions
The IXGT30N120B3D1 has a maximum continuous collector current rating of 50 A.
This IGBT features a maximum collector emitter voltage rating of 1200 V.
It has a maximum power dissipation capability of 300 W, allowing it to operate under demanding conditions.
The operating temperature range for this model spans from -55°C to 150°C.
The maximum gate emitter voltage rating for this IGBT is 20 V, ensuring safe gate control.
The maximum collector emitter saturation voltage is specified at 3.5 V, which facilitates efficient power conversion.
This IGBT is packaged in a 3-pin TO-268 case designed for through hole mounting.
Yes, it complies with RoHS standards, which restrict hazardous substances.
This IGBT is suitable for applications such as motor drives, switching regulators, inverter circuits, and power management.
The IXGT30N120B3D1 has a pin count of 3.
It features an N-type channel configuration, which enhances performance.
This model belongs to the mid-frequency series of IGBTs, suitable for power switching applications.
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