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IXYS HiperFET Polar N-Channel Power MOSFET 36 A, 600 V Enhancement Mode, 3-Pin TO-247 IXFH36N60P

Category Power MOSFET Brand IXYS Condition New

Specifications

Country of Origin India
Brand IXYS
Height 21.46mm
Length 16.26mm
Model IXFH36N60P
Width 5.3mm
Mount Type Through Hole
Series HiperFET, Polar
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 36A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 190mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 650W
Typical Gate Charge Qg @ Vgs 102nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.5V

Key Features

  • Designed for high efficiency power switching applications.
  • Supports maximum continuous drain current of 36 amperes.
  • Maximum drain-source voltage up to 600 volts for robust performance.
  • Enclosed in a durable 3-pin TO-247 through-hole package.
  • Maximum power dissipation rating of 650 watts for reliable thermal handling.
  • Enhancement mode N-channel device with fast intrinsic diode.
  • Typical gate charge is 102 nanocoulombs at Vgs.
  • Operates within a broad temperature range of -55°C to 150°C.

Product Description

The IXYS IXFH36N60P is a high-performance N-channel Power MOSFET designed for industrial and commercial electronic applications requiring efficient power switching and control. This HiperFET™ Polar™ series device handles a continuous drain current of 36 amperes and supports a maximum drain-source voltage of 600 volts, ensuring robust operation under demanding electrical conditions.

Packaged in a sturdy 3-pin TO-247 format suitable for through-hole mounting, the MOSFET facilitates easy integration into power assemblies and printed circuit boards. Its enhancement mode channel provides fast switching capabilities for improved efficiency and reliability in power regulation, inverter, and motor control systems.

The device dissipates up to 650 watts of power, making it capable of handling substantial thermal loads. It features a low maximum drain-source resistance of 190 milliohms that minimizes losses during conduction phases, increasing overall energy efficiency.

The IXFH36N60P maintains stable performance across a wide operating temperature range from -55°C to 150°C, accommodating various industrial and automotive thermal environments. It includes a fast intrinsic diode for enhanced switching behavior and reduced turn-off losses.

Maximum continuous drain current of 36 A for high power applications. 600 V maximum drain-source voltage for safe and reliable switching. TO-247 package type facilitating robust mechanical and thermal properties. Pin count of 3 and through-hole mount for easy PCB integration.

Maximum power dissipation of 650 W enhances reliability in demanding tasks. Enhancement mode N-channel device delivering fast switching performance. Typical gate charge of 102 nC allowing precise gate control. Operating temperature range from -55°C to +150°C providing versatility.

Low Rds(on) of 190 mΩ reducing conduction losses. Forward gate voltage limits at -30 V to +30 V ensure gate protection.

This IXYS Power MOSFET is ideal for use in power supplies, motor drives, industrial lighting, and high-speed switching circuits across industrial, manufacturing, and commercial sectors. Its rugged design and efficient electrical characteristics make it a dependable component in electronic assemblies requiring reliable high current and voltage tolerances.

Explore the full IXYS product range and related electronic components at EnvMart for additional solutions tailored to your power semiconductor needs.

IXYS HiperFET Polar N-Channel Power MOSFET 36 A, 600 V Enhancement Mode, 3-Pin TO-247 IXFH36N60P
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Frequently Asked Questions

The IXFH36N60P supports a maximum continuous drain current of 36 amperes.

This model can handle a maximum drain-source voltage of 600 volts.

It has a maximum power dissipation rating of 650 watts, allowing for reliable thermal handling.

The IXFH36N60P is packaged in a 3-pin TO-247 format suitable for through-hole mounting.

It operates within a broad temperature range from -55°C to 150°C.

The typical gate charge is 102 nanocoulombs at Vgs.

The maximum drain-source resistance is 190 milliohms, which helps minimize conduction losses.

This device features an enhancement mode N-channel configuration.

The dimensions are 21.46 mm in height, 16.26 mm in length, and 5.3 mm in width.

It is suitable for use in power supplies, motor drives, industrial lighting, and high-speed switching circuits.

The forward voltage is rated at 1.5 volts.

The maximum gate-source voltage limits are -30 V to +30 V, ensuring gate protection during operation.

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