$14.00
$13.58
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH36N60P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 650W |
| Typical Gate Charge Qg @ Vgs | 102nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
The IXYS IXFH36N60P is a high-performance N-channel Power MOSFET designed for industrial and commercial electronic applications requiring efficient power switching and control. This HiperFET™ Polar™ series device handles a continuous drain current of 36 amperes and supports a maximum drain-source voltage of 600 volts, ensuring robust operation under demanding electrical conditions.
Packaged in a sturdy 3-pin TO-247 format suitable for through-hole mounting, the MOSFET facilitates easy integration into power assemblies and printed circuit boards. Its enhancement mode channel provides fast switching capabilities for improved efficiency and reliability in power regulation, inverter, and motor control systems.
The device dissipates up to 650 watts of power, making it capable of handling substantial thermal loads. It features a low maximum drain-source resistance of 190 milliohms that minimizes losses during conduction phases, increasing overall energy efficiency.
The IXFH36N60P maintains stable performance across a wide operating temperature range from -55°C to 150°C, accommodating various industrial and automotive thermal environments. It includes a fast intrinsic diode for enhanced switching behavior and reduced turn-off losses.
Maximum continuous drain current of 36 A for high power applications. 600 V maximum drain-source voltage for safe and reliable switching. TO-247 package type facilitating robust mechanical and thermal properties. Pin count of 3 and through-hole mount for easy PCB integration.
Maximum power dissipation of 650 W enhances reliability in demanding tasks. Enhancement mode N-channel device delivering fast switching performance. Typical gate charge of 102 nC allowing precise gate control. Operating temperature range from -55°C to +150°C providing versatility.
Low Rds(on) of 190 mΩ reducing conduction losses. Forward gate voltage limits at -30 V to +30 V ensure gate protection.
This IXYS Power MOSFET is ideal for use in power supplies, motor drives, industrial lighting, and high-speed switching circuits across industrial, manufacturing, and commercial sectors. Its rugged design and efficient electrical characteristics make it a dependable component in electronic assemblies requiring reliable high current and voltage tolerances.
Explore the full IXYS product range and related electronic components at EnvMart for additional solutions tailored to your power semiconductor needs.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent