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Toshiba N-Channel Enhancement Mode MOSFET, 11.5A, 600V, 3-Pin TO-220 TK12E60W,S1VX(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK12E60W,S1VX(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching.
- Maximum power dissipation is rated at 110 W ensuring robust performance.
- Mounting is designed for through-hole applications with 3 pins for secure connections.
- The package dimensions are 4.45 mm width, 15.1 mm height, and 10.16 mm length.
- Suitable for applications within operating temperature range from -55°C to 150°C.
- Maximum gate-source voltage is ±30 V with forward voltage drop approximately 1.7 V.
- Has a maximum drain-source resistance of 300 milliohms which minimizes power loss.
- Typical gate charge is 25 nC enhancing switching speed and efficiency.
Product Description
The Toshiba TK12E60W,S1VX(S is a high-performance N-Channel Enhancement Mode MOSFET designed for use in electronic circuits requiring efficient high voltage switching.
This MOSFET features a continuous drain current capacity of 11.5 A and can handle a maximum drain-source voltage of 600 V. Housed in a standard TO-220 through-hole package with 3 pins, it offers ease of mounting and reliable mechanical stability.
Its maximum power dissipation of 110 W enables it to manage substantial thermal loads, making it suitable for industrial and laboratory power electronics, switching regulators, and motor drive applications.
This component operates effectively across a wide temperature range from -55°C up to 150°C, providing resilience in harsh environmental conditions. The maximum gate-source voltage rating of ±30 V and a forward voltage of approximately 1.7 V deliver superior control and fast switching capabilities.
The MOSFET’s maximum drain-source resistance of 300 milliohms helps minimize conduction losses thereby improving overall energy efficiency. The typical gate charge of 25 nC facilitates quick switching and reduced power consumption in high-frequency operation.
Package dimensions measure 4.45 mm in width, 15.1 mm in height, and 10.16 mm in length, optimized for compact circuit designs. This MOSFET operates in enhancement mode for efficient switching. Maximum power dissipation is rated at 110 W ensuring robust performance.
Mounting is designed for through-hole applications with 3 pins for secure connections. The package dimensions are 4.45 mm width, 15.1 mm height, and 10.16 mm length. Suitable for applications within operating temperature range from -55°C to 150°C.
Maximum gate-source voltage is ±30 V with forward voltage drop approximately 1.7 V. Has a maximum drain-source resistance of 300 milliohms which minimizes power loss. Typical gate charge is 25 nC enhancing switching speed and efficiency.
Explore more Toshiba electronic components and MOSFET products at EnvMart for reliable and efficient semiconductor solutions suitable for electronics design and manufacturing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11.5 A.
This MOSFET can handle a maximum drain-source voltage of 600 V.
It has a maximum power dissipation rating of 110 W.
The package dimensions are 4.45 mm in width, 15.1 mm in height, and 10.16 mm in length.
It operates effectively within a temperature range of -55°C to 150°C.
The maximum gate-source voltage is rated at ±30 V.
The forward voltage drop is approximately 1.7 V.
The maximum drain-source resistance is 300 milliohms.
It is designed for through-hole mounting with 3 pins for secure connections.
The typical gate charge is 25 nC, which enhances switching speed and efficiency.
This model is an N-channel enhancement mode MOSFET.
This MOSFET belongs to the TK series from Toshiba.
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