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Infineon HEXFET N-Channel MOSFET 55 V, 5.2 A, Enhancement Mode, Surface Mount, 4-Pin SOT-223 IRFL4105TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IRFL4105TRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 5.2 A, 55 V, 3+Tab-Pin SOT-223 Infineon IRFL4105PBFBrand | Infineon |
Key Features
- Designed for high-efficiency switching with low on-resistance of 45 milliohms.
- Enhancement mode N-channel configuration ensures robust performance.
- Typical gate charge of 23 nC at a gate voltage of 4.5 V allows fast switching.
- Operates reliably within a temperature range of -55°C to 150°C.
- Maximum power dissipation rating of 2.1 W supports moderate load applications.
- Compact SOT-223 package with dimensions 6.7 mm length, 3.7 mm width, and 1.8 mm height.
- Maximum gate-source voltage rating of ±20 V for device protection.
- Forward voltage drop of 1.3 V optimizes conduction efficiency.
Product Description
Infineon IRFL4105TRPBF HEXFET N-Channel MOSFET is a high-performance transistor designed for efficient switching in power electronic circuits. This device operates with a maximum continuous drain current of 5.2 A and a drain-source voltage rating of 55 V, making it suitable for various industrial, automotive, and consumer electronic applications.
The enhancement mode N-channel MOSFET is housed in a compact 4-pin SOT-223 surface mount package, facilitating ease of integration into printed circuit boards with space constraints. Its low drain-source resistance of 45 milliohms minimizes conduction losses and improves overall system efficiency.
Featuring a typical gate charge of 23 nC at a gate voltage of 4.5 V, the MOSFET allows for rapid switching, enhancing performance in power conversion and motor control circuits. It withstands operating temperatures ranging from -55°C to 150°C, providing reliability under harsh environmental conditions.
The MOSFET supports a maximum power dissipation of 2.1 watts, permitting sustained operation in moderate power designs. It includes a maximum gate-source voltage rating of ±20 V to ensure device safety during transient voltage spikes. The forward voltage of 1.3 V contributes to efficient conduction characteristics.
Designed for high-efficiency switching with low on-resistance of 45 milliohms. Enhancement mode N-channel configuration ensures robust performance. Typical gate charge of 23 nC for fast switching operation. Wide operating temperature range from -55°C to 150°C.
Compact SOT-223 surface mount package for space-saving installation. Maximum power dissipation of 2.1 watts for durability in applications. Maximum gate-source voltage rating of ±20 V for protection. Forward voltage drop of 1.3 V for optimized conduction efficiency.
This MOSFET is ideal for use in power management, switching regulators, motor drives, and industrial control systems. Infineon's HEXFET line is recognized for its reliability and performance in demanding applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.2 A.
This MOSFET has a maximum drain-source voltage rating of 55 V.
It is housed in a compact SOT-223 surface mount package.
The typical gate charge at a gate voltage of 4.5 V is 23 nC.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum power dissipation rating for this model is 2.1 W.
The forward voltage drop is 1.3 V, which optimizes conduction efficiency.
The maximum gate-source voltage rating is ±20 V.
The dimensions of the package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
This model uses an N-channel configuration.
The maximum drain-source resistance is 45 milliohms.
It is suitable for power management, switching regulators, motor drives, and industrial control systems.
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