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Infineon HEXFET N-Channel MOSFET 43 A 60 V Enhancement Mode Surface Mount TO-263 3-Pin IRFS3806TRLPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS3806TRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 15.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 71W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET supports efficient power management with low on-resistance of 15.8 mΩ.
- Maximum power dissipation rating of 71 W suits high-demand applications.
- Maximum gate-to-source voltage range is -20 V to +20 V.
- Operates reliably within -55°C to +175°C temperature range.
- Typical gate charge of 22 nC enables fast switching performance.
- Compact dimensions with 10.67 mm length, 9.65 mm width, and 4.83 mm height.
- Designed for surface mount technology, supporting modern PCB layouts.
- Ideal for high-speed power switching and synchronous rectification in power supplies.
Product Description
Infineon IRFS3806TRLPBF HEXFET N-Channel MOSFET is engineered for high-efficiency electronic applications requiring reliable power switching and amplification. Rated for a maximum continuous drain current of 43 A and a drain-source voltage of 60 V, this enhancement mode MOSFET features a low on-resistance of 15.8 mΩ, minimizing power loss and enhancing thermal performance.
The device is housed in a TO-263 surface mount package with three pins, making it suitable for compact and modern PCB assembly. Its maximum power dissipation of 71 W allows it to handle demanding operating conditions, while the maximum operating temperature of up to 175°C makes it ideal for high-temperature industrial environments.
Its typical gate charge of 22 nC at a gate-source voltage of 10 V facilitates fast switching speeds essential for high-frequency circuits. The gate-to-source voltage tolerance of -20 V to +20 V offers design flexibility for various electronic systems.
Applications include uninterruptible power supply (UPS) systems, synchronous rectification in switched-mode power supplies (SMPS), and high-speed power switching in electronics and automation industries. The MOSFET’s rugged HEXFET architecture improves durability under dynamic stress.
This MOSFET supports continuous 43 A drain current for high power handling. Low on-resistance of 15.8 mΩ reduces conduction losses. Surface mount TO-263 package enables compact assembly. Maximum power dissipation of 71 W supports demanding loads.
Wide operating temperature range from -55°C to +175°C ensures reliability. Gate-to-source voltage rating of -20 V to +20 V allows design flexibility. Typical gate charge enables fast switching in high-frequency circuits.
Robust construction for operation in automotive and industrial equipment.
Infineon products like the IRFS3806TRLPBF are widely used in industrial, electronic components manufacturing, power management, and electrical equipment sectors. Explore more advanced MOSFETs and discrete semiconductors from Infineon on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IRFS3806TRLPBF is 43 A.
This model has a maximum drain-source voltage rating of 60 V.
The on-resistance is rated at 15.8 mΩ, which helps minimize power loss.
The maximum power dissipation rating is 71 W, suitable for high-demand applications.
It operates reliably within a temperature range of -55°C to +175°C.
The typical gate charge is 22 nC at a gate-source voltage of 10 V, enabling fast switching performance.
This model is housed in a TO-263 surface mount package with three pins.
The gate-to-source voltage tolerance is -20 V to +20 V, providing design flexibility.
It is suitable for applications such as uninterruptible power supply (UPS) systems and synchronous rectification in switched-mode power supplies (SMPS).
The rugged HEXFET architecture improves durability under dynamic stress, making it suitable for demanding environments.
The dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
This model features an N-channel type, designed for enhancement mode operation.
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