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Infineon HEXFET N-Channel MOSFET 4.4A 55V Enhancement Surface Mount SOT-223 4-Pin IRLL024NTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.739mm |
| Length | 6.7mm |
| Model | IRLL024NTRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.4A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 10.4nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1V |
Key Features
- Offers low on-resistance of 100 milliohms for reduced conduction losses.
- Features enhancement mode switching for efficient power management.
- Supports maximum power dissipation of 2.1 watts ensuring reliable operation.
- Operates over a wide temperature range from -55°C to 150°C.
- Maximum gate-source voltage of ±16 V with typical gate charge of 10.4 nC.
- Designed for surface mounting using SOT-223 package with 4 pins.
- Forward voltage rated at 1 V suitable for power switching applications.
- No automotive standard certification; recommended for industrial and electronic components use.
Product Description
Infineon IRLL024NTRPBF is a HEXFET N-Channel MOSFET designed with a maximum continuous drain current of 4.4 A and a maximum drain-source voltage of 55 V. It operates in enhancement mode and comes in a low-profile, compact 4-pin SOT-223 surface mount package measuring 6.7 mm in length, 3.7 mm in width, and 1.739 mm in height. The device is capable of dissipating up to 2.1 W and functions reliably in operating temperatures ranging from -55°C to 150°C.
With a low drain-source resistance of 100 milliohms, this MOSFET offers efficient conduction minimizing power losses, making it suitable for power switching applications. The maximum gate-source voltage rating is ±16 V, with a typical gate charge of 10.4 nC facilitating fast switching performance. The forward voltage drop is approximately 1 V, contributing to effective device operation.
This Infineon HEXFET MOSFET series is recognized for its high efficiency and power density, ideal for use in industrial electronics, power management circuits, and discrete semiconductor applications. The surface mount design supports modern PCB assembly processes and compact layouts.
The product does not hold any specific automotive certifications but meets standard manufacturing quality for reliable operation in various electronic designs. It is a new product sourced from India, suitable for integration into power electronics and discrete semiconductor systems.
Offers low on-resistance of 100 milliohms for reduced conduction losses. Features enhancement mode switching for efficient power management. Supports maximum power dissipation of 2.1 watts ensuring reliable operation. Operates over a wide temperature range from -55°C to 150°C.
Compact dimensions: length 6.7 mm, width 3.7 mm, height 1.739 mm. Maximum gate-source voltage of ±16 V with typical gate charge of 10.4 nC. Designed for surface mounting using SOT-223 package with 4 pins. Forward voltage rated at 1 V suitable for power switching applications.
No automotive standard certification; recommended for industrial and electronic components use. Explore more discrete semiconductors and MOSFET devices from Infineon in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.4 A.
It has a maximum drain-source voltage rating of 55 V.
This MOSFET supports a maximum power dissipation of 2.1 W.
The SOT-223 package measures 6.7 mm in length, 3.7 mm in width, and 1.739 mm in height.
It operates over a wide temperature range from -55°C to 150°C.
The typical gate charge is 10.4 nC at a gate-source voltage.
The maximum gate-source voltage is ±16 V.
It features an N-channel design, operating in enhancement mode.
The forward voltage drop is rated at approximately 1 V.
The maximum drain-source resistance is 100 milliohms.
This model does not hold any specific automotive certifications and is recommended for industrial and electronic components use.
This device has a pin count of 4.
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