$0.59
$0.57
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET 17 A 100 V Enhancement Mode 3-Pin TO-252 IRLR3410TRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR3410TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410PBFBrand | Infineon |
Key Features
- This MOSFET has a maximum continuous drain current of 17 amperes.
- The maximum drain-source voltage rating is 100 volts, ideal for various switching applications.
- It features a TO-252 package type with surface mount design for efficient board integration.
- The device has a low maximum drain-source resistance of 155 milliohms, enhancing efficiency.
- Maximum power dissipation is 79 watts, supporting high power use cases.
- Operating temperature ranges from -55°C to 175°C ensuring durability under harsh conditions.
- Gate charge is typically 34 nanocoulombs, facilitating fast switching.
- Compliant with AEC-Q101 automotive standard ensuring reliability for automotive electronics.
Product Description
Infineon IRLR3410TRPBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for efficient switching applications in electronic circuits. It supports a maximum continuous drain current of 17 amperes and a drain-source voltage of up to 100 volts, making it suitable for industrial, automotive, and power management uses.
The device comes in a TO-252 surface mount package, facilitating easy integration into printed circuit boards while providing excellent thermal dissipation. With a low drain-source resistance of 155 milliohms, it minimizes conduction losses, enhancing system efficiency.
Its maximum power dissipation rating is 79 watts, allowing operation under significant load conditions. The component maintains functionality across a wide operating temperature range from -55°C to 175°C, suitable for challenging environments including automotive applications where it meets the AEC-Q101 standard.
Designed for enhancement mode operation, this MOSFET offers reliable switching performance. The typical gate charge of 34 nanocoulombs enables rapid switching speeds necessary for efficient power conversion and management.
Compact physical dimensions of 6.73 mm in length, 6.22 mm width, and 2.39 mm height allow for space-efficient circuit layouts. This MOSFET supports 17 A continuous drain current for demanding power electronics. Voltage rating of 100 V ensures compatibility with a wide range of power supplies.
TO-252 package and surface mount technology provide practical assembly benefits. Low Rds(on) of 155 mΩ reduces power losses in high-frequency switching. High power dissipation rating of 79 W allows use in robust applications.
Certified to AEC-Q101 for automotive-grade reliability. Wide temperature range supports diverse industrial environments. Enhancement mode channel enables efficient switching control. Compact size fits modern electronic designs and space-limited systems.
This Infineon HEXFET MOSFET is ideal for designing efficient power systems in industrial automation, automotive electronics, renewable energy inverters, and consumer electronic devices. Explore our electronics components catalog for more power semiconductors and related products.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 17 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The maximum power dissipation for this MOSFET is 79 watts.
The typical gate charge is 34 nanocoulombs.
The operating temperature range is from -55°C to 175°C.
This model complies with the AEC-Q101 automotive standard.
This MOSFET features an N-channel design and operates in enhancement mode.
The maximum gate-source voltage is -16V to +16V.
The maximum drain-source resistance is 155 milliohms.
This model is designed for surface mount installation.
The forward voltage for this MOSFET is 1.3 volts.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.59
$0.57
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent