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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | DMG1024UV-7 |
| Width | 1.25mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-563 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.38A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 530mW |
| Typical Gate Charge Qg @ Vgs | 736.6nC |
| Maximum Gate Source Voltage Vgs | -6, +6V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
DiodesZetex DMG1024UV-7 is a dual isolated N-channel enhancement MOSFET designed for compact, efficient switching applications. It delivers a maximum continuous drain current of 1.38 A and supports a maximum drain-source voltage of 20 V. Packaged in a 6-pin SOT-563 surface mount package, it provides a reliable solution with a maximum power dissipation rating of 530 mW and a forward voltage of 0.7 V.
This MOSFET exhibits a low drain-source resistance of 10 Ω and a typical gate charge of 736.6 nC at Vgs, enabling effective switching performance. It is rated for operation between -55°C and +150°C, making it suitable for harsh environments including automotive and industrial electronics.
The device complies with rigorous industry standards such as AEC-Q101 for automotive quality, RoHS for environmental compliance, UL 94V-0 for flammability, MIL-STD-202 for reliability testing, and J-STD-020 for moisture sensitivity, ensuring a high-quality, durable component.
The compact package dimensions of 1.7 mm (length), 1.25 mm (width), and 0.6 mm (height) facilitate space-saving designs on printed circuit boards. With its isolated transistor configuration and dual element chip design, this MOSFET is ideal for high-performance power management in consumer, industrial, and automotive electronic systems.
The transistor has a maximum power dissipation of 530 mW for reliable performance. Typical gate charge is 736.6 nC, enabling efficient switching. Operating temperature ranges from -55°C to +150°C for robust application. The device features a low drain-source resistance of 10 Ω ensuring low conduction losses.
The package dimensions are 1.7 mm length, 1.25 mm width, and 0.6 mm height. Complies with industry standards including AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, and J-STD-020. Suitable for surface mount electronics, automotive, and industrial applications.
This MOSFET is optimal for industrial, automotive, laboratory, and manufacturing electronics where reliable and compact power switching components are required. Browse related categories in EnvMart’s electronics semiconductor MOSFET selection for additional compatible components and accessories.
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