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DiodesZetex Isolated 2 N-Channel Enhancement MOSFET 1.38 A 20 V 6-Pin SOT-563 DMG1024UV-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.6mm
Length 1.7mm
Model DMG1024UV-7
Width 1.25mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOT-563
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.38A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 530mW
Typical Gate Charge Qg @ Vgs 736.6nC
Maximum Gate Source Voltage Vgs -6, +6V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • The transistor has a maximum power dissipation of 530 mW for reliable performance.
  • Typical gate charge is 736.6 nC, enabling efficient switching.
  • Operating temperature ranges from -55°C to +150°C for robust application.
  • The device features a low drain-source resistance of 10 Ω ensuring low conduction losses.
  • The package dimensions are 1.7 mm length, 1.25 mm width, and 0.6 mm height.
  • Complies with industry standards including AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, and J-STD-020.
  • Suitable for surface mount electronics, automotive, and industrial applications.

Product Description

DiodesZetex DMG1024UV-7 is a dual isolated N-channel enhancement MOSFET designed for compact, efficient switching applications. It delivers a maximum continuous drain current of 1.38 A and supports a maximum drain-source voltage of 20 V. Packaged in a 6-pin SOT-563 surface mount package, it provides a reliable solution with a maximum power dissipation rating of 530 mW and a forward voltage of 0.7 V.

This MOSFET exhibits a low drain-source resistance of 10 Ω and a typical gate charge of 736.6 nC at Vgs, enabling effective switching performance. It is rated for operation between -55°C and +150°C, making it suitable for harsh environments including automotive and industrial electronics.

The device complies with rigorous industry standards such as AEC-Q101 for automotive quality, RoHS for environmental compliance, UL 94V-0 for flammability, MIL-STD-202 for reliability testing, and J-STD-020 for moisture sensitivity, ensuring a high-quality, durable component.

The compact package dimensions of 1.7 mm (length), 1.25 mm (width), and 0.6 mm (height) facilitate space-saving designs on printed circuit boards. With its isolated transistor configuration and dual element chip design, this MOSFET is ideal for high-performance power management in consumer, industrial, and automotive electronic systems.

The transistor has a maximum power dissipation of 530 mW for reliable performance. Typical gate charge is 736.6 nC, enabling efficient switching. Operating temperature ranges from -55°C to +150°C for robust application. The device features a low drain-source resistance of 10 Ω ensuring low conduction losses.

The package dimensions are 1.7 mm length, 1.25 mm width, and 0.6 mm height. Complies with industry standards including AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, and J-STD-020. Suitable for surface mount electronics, automotive, and industrial applications.

This MOSFET is optimal for industrial, automotive, laboratory, and manufacturing electronics where reliable and compact power switching components are required. Browse related categories in EnvMart’s electronics semiconductor MOSFET selection for additional compatible components and accessories.

DiodesZetex Isolated 2 N-Channel Enhancement MOSFET 1.38 A 20 V 6-Pin SOT-563 DMG1024UV-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.38 A.

It supports a maximum drain-source voltage of 20 V.

The package dimensions are 1.7 mm in length, 1.25 mm in width, and 0.6 mm in height.

The typical gate charge is 736.6 nC at Vgs.

The maximum power dissipation rating is 530 mW.

It operates within a temperature range of -55°C to +150°C.

This model uses surface mount technology.

It complies with AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, and J-STD-020 standards.

The device features a low drain-source resistance of 10 Ω.

The SOT-563 package has 6 pins.

The forward voltage is 0.7 V.

This model is suitable for surface mount electronics, automotive, and industrial applications.

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