Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement Mode, 4-Pin SOT-223 BSP315PH6327XTSA1

Infineon BSP315PH6327XTSA1 SIPMOS Type P-Channel MOSFET is a 4-pin surface mount transistor designed for power switching applications requiring moderate current and voltage handling. Featuring an enhancement mode P-channel channel, it can handle continuous drain currents of 1.17 amps with a maximum drain source voltage of 60 volts.

This device is optimized for automotive and industrial environments, offering an extended temperature range from -55°C to 150°C. Its low gate charge of 5.2 nC facilitates efficient switching with reduced power loss. The maximum drain-source resistance (RDS(on)) of 800 milliohms helps minimize conduction losses, contributing to better overall device efficiency.

Supplied in a compact SOT-223 package with four pins, this MOSFET is suitable for surface mount applications such as battery management load switching, reverse-polarity protection circuits, low-power DC/DC converters, and telematics module load disconnects. The 1.8 watt power dissipation rating allows for sustained operation in compact assemblies.

AEC-Q101 qualification ensures the MOSFET meets automotive-grade stress tolerance standards, making it ideal for vehicle electronic systems and industrial controls requiring reliable performance under thermal and electrical stress.

Supports continuous drain current of 1.17 amps for moderate power applications. Maximum drain source voltage rating of 60 volts for medium-voltage switching. Enhanced mode device suitable for reliable automotive and industrial environments.

Low maximum RDS(on) of 800 milliohms minimizes conduction losses. Typical gate charge of 5.2 nanocoulombs ensures efficient gate driving. Power dissipation up to 1.8 watts for sustained low-power operation. Wide operating temperature range from -55°C to 150°C for harsh conditions.

Package type SOT-223 with 4 pins supports surface mount technology. AEC-Q101 automotive qualification ensures stress tolerance.

This MOSFET is highly suitable for use in automotive battery management systems, reverse polarity protection, low-power DC/DC converter switching, and compact power control boards requiring surface mount components. It offers a reliable solution for industrial and automotive electronics needing efficient power switching with compact form factor.

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