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Infineon OptiMOS 3 N-Channel MOSFET 34A 200V Enhancement Mode 3-Pin TO-220 IPP320N20N3GXKSA1
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP320N20N3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 34A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Enhancement mode N-channel design ensures efficient power switching.
- Maximum continuous drain current rating of 34 amperes supports high current loads.
- Drain-source voltage rating of 200 volts suitable for medium voltage applications.
- Low on-resistance of 32 milliohms minimizes conduction losses.
- Maximum power dissipation of 136 watts allows for high power handling.
- Thermal operation range from -55°C to 175°C provides reliability in harsh environments.
- Typical gate charge is 22 nano-Coulombs for fast switching performance.
- Compatible with through-hole mounting and a compact 3-pin TO-220 package.
Product Description
Infineon IPP320N20N3GXKSA1 OptiMOS 3 N-Channel MOSFET delivers robust performance with a maximum continuous drain current of 34A and a drain-source voltage of 200V. This enhancement mode transistor is housed in a 3-pin TO-220 package, designed for through-hole mounting and optimized for power switching applications within industrial electronics, automotive, and renewable energy sectors.
The device features a low drain-source on-resistance of 32 milliohms, reducing conduction losses and improving overall efficiency in high-frequency switching circuits. With a maximum power dissipation rating of 136W, it effectively handles significant power loads while maintaining stable operation across a broad temperature range from -55°C to 175°C, ensuring reliability in demanding environments.
Its typical gate charge of 22nC enables rapid switching, making it suitable for synchronous rectification and DC-DC converters. The product is lead-free, RoHS compliant, and manufactured with halogen-free materials for increased safety and environmental responsibility.
Enhancement mode N-channel MOSFET type for efficient power control. 34A continuous drain current rating for high current capability. 200V maximum drain-source voltage for medium voltage applications. Low Rds(on) of 32 milliohms minimizes power loss during conduction.
High power dissipation capacity of 136W supports demanding electrical loads. Wide operating temperature range from -55°C to 175°C ensures stability. Fast switching thanks to typical gate charge of 22 nano-Coulombs. Standard 3-pin TO-220 package for easy mounting and heat dissipation.
RoHS compliant and halogen-free for environmentally friendly use. Suitable for power supplies, electric vehicle chargers, battery management systems, and renewable energy inverters.
Ideal for industrial, automation, automotive, and commercial electronic applications where efficient power management and thermal stability are crucial. The MOSFET’s compact TO-220 package is compatible with standard PCB designs and includes features that support high-frequency switching and reliable thermal management.
Explore more discrete semiconductors and MOSFET solutions in EnvMart’s electronics components catalog to support your advanced project requirements.
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Frequently Asked Questions
The maximum continuous drain current rating is 34 amperes, allowing it to support high current loads effectively.
It has a drain-source voltage rating of 200 volts, making it suitable for medium voltage applications.
The low drain-source on-resistance is 32 milliohms, which minimizes conduction losses during operation.
The maximum power dissipation capacity is 136 watts, allowing it to handle significant power loads.
It operates effectively within a temperature range of -55°C to 175°C, ensuring reliability in harsh environments.
The typical gate charge is 22 nano-Coulombs, which enables fast switching performance.
This model supports through-hole mounting and is housed in a compact 3-pin TO-220 package.
The dimensions are 15.95 mm in height, 10.36 mm in length, and 4.57 mm in width.
The maximum gate-source voltage is -20 to +20 volts, which is essential for its operation.
Yes, this device is RoHS compliant and manufactured with halogen-free materials for increased safety and environmental responsibility.
It is suitable for applications in power supplies, electric vehicle chargers, battery management systems, and renewable energy inverters.
This model belongs to the OptiMOS 3 series, which is designed for efficient power management.
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