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ROHM N-Channel MOSFET 10 A 1200 V Enhancement 3-Pin TO-247N SCT2450KEHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SCT2450KEHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4.3V |
Key Features
- Maximum continuous drain current of 10 A ensures robust current handling.
- High drain-source voltage rating of 1200 V for reliable operation.
- Low maximum drain-source resistance of 450 milliohms for efficient conduction.
- Typical gate charge of 27 nC enables fast switching performance.
- Maximum power dissipation of 85 W suitable for high power applications.
- Operation temperature range from -55°C to 150°C for varied environments.
- Through hole mount type with 3-pin configuration for easy integration.
- Forward voltage of 4.3 V ensures stable conduction.
Product Description
ROHM SCT2450KEHRC11 N-Channel MOSFET is a reliable power semiconductor device featuring a 10 A maximum continuous drain current and 1200 V maximum drain-source voltage in a three-pin TO-247N package. This enhancement mode device is engineered to deliver superior efficiency and fast switching speeds essential for modern power applications.
The device exhibits a low maximum drain-source resistance of 450 milliohms, minimizing conduction losses and thermal buildup, complemented by a typical gate charge of 27 nC for fast switching responses. It supports a maximum power dissipation rating of 85 watts, enabling sustained operation under demanding conditions up to 150°C, while tolerating ambient temperatures down to -55°C.
Its through-hole mount design with 3 pins facilitates straightforward PCB integration. The forward voltage of 4.3 V stabilizes conduction characteristics. This MOSFET features a lead-free plating process and complies with RoHS directives, ensuring environmental safety.
Key industrial applications include solar power inverters, DC/DC converters, induction heating equipment, and motor drive circuits. The fast reverse recovery and ease of paralleling enable designers to optimize power system efficiency and reliability.
Maximum continuous drain current of 10 A ensures robust current handling. High drain-source voltage of 1200 V for reliable operation. Low Rds(on) at 450 mOhm reduces conduction losses. Typical gate charge of 27 nC for fast switching.
High power dissipation of 85 W supports demanding applications. Wide operating temperature from -55°C to 150°C. Through-hole mount with 3 pins for conventional PCB assembly. Forward voltage of 4.3 V for stable conduction.
Pb-free and RoHS compliant for environmental standards. Suitable for solar inverters, induction heating, and motor drives. Explore our extensive MOSFET category at EnvMart for compatible semiconductor components and design solutions from leading brands like ROHM.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 A.
It has a maximum drain-source voltage rating of 1200 V.
This MOSFET supports a maximum power dissipation of 85 W.
The typical gate charge is 27 nC, which enables fast switching performance.
It operates within a temperature range from -55°C to 150°C.
This model features a through-hole mount type with a 3-pin configuration.
The maximum drain-source resistance is 450 milliohms.
The forward voltage for this MOSFET is 4.3 V.
It is suitable for applications such as solar power inverters, DC/DC converters, induction heating equipment, and motor drive circuits.
The package type is TO-247N.
This device is an N-channel MOSFET.
The maximum gate-source voltage for this model is 22 V.
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