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Vishay SQ Rugged N-Channel MOSFET 12 A 60 V Enhancement Mode 8-Pin SOIC SQ4850EY-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SQ4850EY-T1_GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 47mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.8W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Utilizes enhancement mode for efficient switching performance.
- 8-Pin SOIC package offers surface mount installation.
- Low drain-source resistance of 47 milliohms ensures minimal power loss.
- Maximum power dissipation of 6.8 watts supports demanding conditions.
- Operating temperature range from -55°C to 175°C for high reliability.
- Typical gate charge of 20 nanoCoulombs for fast switching.
- Complies with automotive standard AEC-Q101 for quality assurance.
Product Description
Vishay SQ4850EY-T1_GE3 is a rugged N-Channel MOSFET transistor from Vishay's SQ Rugged series, engineered for automotive and industrial electronics requiring high reliability and harsh environment tolerance.
This MOSFET features a maximum continuous drain current of 12 amps and a maximum drain-source voltage of 60 volts, suitable for switching and amplification tasks under demanding conditions.
The device operates in enhancement mode and is housed in a compact 8-pin SOIC package enabling surface-mount assembly and space-saving PCB designs. Its low on-resistance of 47 milliohms reduces conduction losses, and a maximum power dissipation of 6.8 watts allows effective thermal handling to support robust operation.
Designed for wide temperature ranges from -55°C to 175°C and includes a typical gate charge of 20 nanoCoulombs, facilitating fast switching speeds essential in automotive electronics.
Compliance with the AEC-Q101 automotive standard ensures stringent quality and reliability for automotive applications. Utilizes enhancement mode for efficient switching performance. 8-Pin SOIC package offers surface mount installation.
Low drain-source resistance of 47 milliohms ensures minimal power loss. Maximum power dissipation of 6.8 watts supports demanding conditions. Operating temperature range from -55°C to 175°C for high reliability. Typical gate charge of 20 nanoCoulombs for fast switching.
Complies with automotive standard AEC-Q101 for quality assurance. Compact dimensions: 5 mm length, 4 mm width, and 1.55 mm height.
This MOSFET is ideal for industrial manufacturing, automotive control systems, power management circuitry, and rugged electronic equipment requiring durable and reliable discrete semiconductors. Its SOIC footprint ensures compatibility with automated surface-mount assembly.
Explore additional Vishay SQ Rugged components and other high-quality semiconductors at EnvMart for your electronics design and production needs.
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