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Vishay TrenchFET N-Channel Power MOSFET, 20.5 A Continuous Drain Current, 40 V Drain Source Voltage SI4124DY-T1-GE3

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Vishay TrenchFET N-Channel Power MOSFET, 20.5 A Continuous Drain Current, 40 V Drain Source Voltage SI4124DY-T1-GE3

Name: Vishay TrenchFET N-Channel Power MOSFET, 20.5 A Continuous Drain Current, 40 V Drain Source Voltage SI4124DY-T1-GE3
Brand: Vishay
SKU: 375677
Price: 20.22 USD
Availability: InStock

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.55mm
Length	5mm
Model	SI4124DY-T1-GE3
Width	4mm
Mount Type	Surface
Series	TrenchFET
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Standards/Approvals	IEC 61249-2-21
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	20.5A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.009Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5.7W
Typical Gate Charge Qg @ Vgs	21nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Features enhancement mode channel operation for precise control.
Encapsulated in a compact 8-pin SOIC surface mount package.
Low on-resistance of 0.009 Ω max to minimize power loss.
High maximum power dissipation of 5.7 W supports robust performance.
Wide operating temperature range from -55°C to 150°C for reliability.
Typical gate charge of 21 nC at Vgs ensures swift switching.
Maximum gate-source voltage of -20 V to +20 V for stable gate drive.
Complies with IEC 61249-2-21 standards ensuring quality and safety.

Product Description

Vishay SI4124DY-T1-GE3 is a TrenchFET N-Channel Power MOSFET delivering a maximum continuous drain current of 20.5 A and a drain source voltage of 40 V. This 8-pin SOIC package device operates in enhancement mode, offering excellent switching performance for a variety of power management applications.

With a low maximum drain source resistance (Rds(on)) of 0.009 Ω, the MOSFET minimizes conduction losses, contributing to energy-efficient circuit designs. Its power dissipation rating of 5.7 W supports stable operation under demanding conditions. The device is suitable for surface mount technology on printed circuit boards and features a standard size of 5 mm length, 4 mm width, and 1.55 mm height, making it compact for space-constrained designs.

The operating temperature range of -55°C to 150°C ensures reliable performance across various industrial environments. The typical gate charge of 21 nC and gate-source voltage limits of -20 V to +20 V allow precise and rapid switching, critical for power electronic conversion and control.

This component complies with IEC 61249-2-21 standards, assuring electromagnetic compatibility and reliability required in automotive and industrial applications, despite not being automotive qualified. Manufactured in China, it is ideal for use in industrial electronics, laboratory equipment, manufacturing systems, and power supply units.

Features enhancement mode channel operation for precise control. Packaged in 8-pin SOIC surface mount package for compact installation. Low Rds(on) of 0.009 Ω reduces energy losses in power circuits. Max power dissipation rating of 5.7 W supports high power applications.

Operates reliably within the temperature range of -55°C to 150°C. Typical gate charge of 21 nC enables efficient switching performance. Gate-source voltage rated for -20 V to +20 V ensures gate reliability. Meets IEC 61249-2-21 standards for quality and safety assurance.

Compact dimensions: 5 mm length, 4 mm width, 1.55 mm height. Manufactured in China for global industry use. Explore similar Vishay MOSFETs and electronic components on EnvMart for all your power semiconductor needs.