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DiodesZetex IntelliFET N-Channel MOSFET 2.8 A 70 V Enhancement 4-Pin SOT-223 ZXMS6006DGTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin Germany
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model ZXMS6006DGTA
Width 3.55mm
Mount Type Surface
Series IntelliFET
Maximum Operating Temperature 125°C
Package Type SOT-223
Minimum Operating Temperature -40°C
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RS Stock No. 738-5210Brand: DiodesZetexManufacturers Part No.: ZXMS6006DGTA
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 2.8A
Maximum Drain Source Voltage Vds 70V
Maximum Drain Source Resistance Rds 125mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3W

Key Features

  • IntelliFET technology integrates self-protecting circuits against ESD, over-current, over-voltage, and over-temperature conditions.
  • Features active clamp for over voltage protection and short circuit protection with auto restart.
  • Enhanced logic level input for easy drive compatibility.
  • Surface mount device with compact dimensions of 6.55 mm length, 3.55 mm width, and 1.65 mm height.
  • Wide operating temperature range from -40°C to 125°C ensures reliable performance in demanding environments.
  • Maximum power dissipation of 3 watts supports efficient thermal management.
  • N-channel enhancement mode MOSFET offering robust and efficient switching performance for industrial and electronic applications.

Product Description

DiodesZetex ZXMS6006DGTA is an IntelliFET N-channel MOSFET designed for high reliability and protection with a maximum continuous drain current of 2.8 A and drain-source voltage of 70 V. Packaged in a 4-pin SOT-223 surface mount casing, this device integrates multiple protection circuits against electrostatic discharge (ESD), over-current, over-voltage, and thermal stress, enhancing robustness for demanding electronic and industrial uses.

The IntelliFET technology in this MOSFET includes a short circuit protection with auto restart to prevent damage, active clamp circuits for over voltage protection, and built-in load dump protection. The device supports logic level input making it compatible with low voltage control systems.

With a maximum power dissipation rating of 3 W and thermal operating limits between -40°C and 125°C, the ZXMS6006DGTA ensures stable performance in various conditions. Its compact physical dimensions (6.55 mm length, 3.55 mm width, and 1.65 mm height) facilitate dense PCB layouts in industrial and consumer electronics.

This MOSFET is ideal for power management, protection modules, and switching applications in automotive, industrial equipment, and electronic systems. IntelliFET integrated self-protection against ESD and over-stress conditions.

Short circuit and over voltage protection with auto restart functionality. Logic level input for seamless interfacing with control circuits. Compact 4-pin SOT-223 surface mount package. High reliability across wide temperature ranges.

Efficient thermal handling with 3 W dissipation capability. Robust N-channel MOSFET suitable for industrial and electronic applications. Explore the full range of MOSFETs and discrete semiconductors at EnvMart for your electronic component sourcing needs.

DiodesZetex IntelliFET N-Channel MOSFET 2.8 A 70 V Enhancement 4-Pin SOT-223 ZXMS6006DGTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.8 A.

The maximum drain-source voltage for the ZXMS6006DGTA is 70 V.

This model has dimensions of 6.55 mm in length, 3.55 mm in width, and 1.65 mm in height.

The maximum power dissipation rating of the ZXMS6006DGTA is 3 W.

The operating temperature range for this model is from -40°C to 125°C.

This model is packaged in a 4-pin SOT-223 surface mount casing.

It includes protection against ESD, over-current, over-voltage, and thermal stress, along with short circuit protection and auto restart functionality.

Yes, it supports logic level input, making it compatible with low voltage control systems.

The channel mode of this MOSFET is enhancement.

The maximum drain-source resistance for this model is 125 mΩ.

The country of origin for this model is Germany.

This MOSFET is suitable for power management, protection modules, and switching applications in automotive, industrial equipment, and electronic systems.

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