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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVP3310A |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 140mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 625mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
DiodesZetex ZVP3310A is a P-Channel MOSFET designed for discrete semiconductor applications, packaged in a TO-92 3-pin through-hole device. It supports a maximum continuous drain current of 140 mA and a drain-source voltage maximum of 100 V, making it ideal for moderate power electronic switching tasks.
This enhancement mode MOSFET provides reliable channel control with a low Rds(on) of 20 Ω to minimize conduction losses. It accommodates a broad temperature operating range from -55°C to 150°C, ensuring performance stability under various environmental conditions.
The device features a maximum gate-source voltage tolerance of ±20 V and a forward voltage of -1.2 V, enabling robust operation within power management circuits. Its compact physical dimensions (length 4.77 mm, width 2.41 mm, height 4.01 mm) allow for efficient PCB space utilization.
This MOSFET is highly suitable for applications in industrial electronics, power switching circuits, and electronic component manufacturing where through-hole mounting and performance consistency are required.
Operates with a maximum drain-source voltage of 100 V. Maximum continuous drain current of 140 mA for moderate power loads. Enhancement type channel ensures efficient switching. 3-pin TO-92 package with through-hole mounting.
Power dissipation cap at 625 mW supports thermally moderate environments. Wide operating temperature range from -55°C to 150°C. Gate-source voltage max ±20 V for device protection. Low maximum drain-source resistance (20 Ω) lowers conduction losses.
Forward voltage of -1.2 V for fast switching. Ideal for industrial, laboratory, and electronic manufacturing applications. Suitable for a wide range of electronic circuit designs and power management implementations. Explore more DiodesZetex MOSFETs and semiconductor products in the Electronics & Electricals category at EnvMart for superior industrial and commercial applications.
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