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DiodesZetex P-Channel MOSFET 140 mA 100 V Enhancement 3-Pin TO-92 ZVP3310A

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZVP3310A
Width 2.41mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 140mA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 20Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 625mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Operates with a maximum drain-source voltage of 100 V.
  • Features enhancement mode channel for reliable switching.
  • Through-hole mount type for easy PCB integration.
  • Compact dimensions with length 4.77 mm, width 2.41 mm, and height 4.01 mm.
  • Maximum power dissipation of 625 mW supports moderate power applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Maximum gate-source voltage of ±20 V ensures robust gate protection.
  • Low maximum drain-source resistance of 20 Ω for efficient conduction.

Product Description

DiodesZetex ZVP3310A is a P-Channel MOSFET designed for discrete semiconductor applications, packaged in a TO-92 3-pin through-hole device. It supports a maximum continuous drain current of 140 mA and a drain-source voltage maximum of 100 V, making it ideal for moderate power electronic switching tasks.

This enhancement mode MOSFET provides reliable channel control with a low Rds(on) of 20 Ω to minimize conduction losses. It accommodates a broad temperature operating range from -55°C to 150°C, ensuring performance stability under various environmental conditions.

The device features a maximum gate-source voltage tolerance of ±20 V and a forward voltage of -1.2 V, enabling robust operation within power management circuits. Its compact physical dimensions (length 4.77 mm, width 2.41 mm, height 4.01 mm) allow for efficient PCB space utilization.

This MOSFET is highly suitable for applications in industrial electronics, power switching circuits, and electronic component manufacturing where through-hole mounting and performance consistency are required.

Operates with a maximum drain-source voltage of 100 V. Maximum continuous drain current of 140 mA for moderate power loads. Enhancement type channel ensures efficient switching. 3-pin TO-92 package with through-hole mounting.

Power dissipation cap at 625 mW supports thermally moderate environments. Wide operating temperature range from -55°C to 150°C. Gate-source voltage max ±20 V for device protection. Low maximum drain-source resistance (20 Ω) lowers conduction losses.

Forward voltage of -1.2 V for fast switching. Ideal for industrial, laboratory, and electronic manufacturing applications. Suitable for a wide range of electronic circuit designs and power management implementations. Explore more DiodesZetex MOSFETs and semiconductor products in the Electronics & Electricals category at EnvMart for superior industrial and commercial applications.

DiodesZetex P-Channel MOSFET 140 mA 100 V Enhancement 3-Pin TO-92 ZVP3310A
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Frequently Asked Questions

The maximum continuous drain current for this model is 140 mA.

It supports a maximum drain-source voltage of 100 V.

This model has dimensions of 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height.

The maximum power dissipation is rated at 625 mW.

It operates within a temperature range from -55°C to 150°C.

This model uses a through-hole mounting type.

The maximum gate-source voltage is ±20 V.

The channel type of this model is P-Channel.

The forward voltage is -1.2 V.

It has a maximum drain-source resistance of 20 Ω.

This model is packaged in a TO-92 format.

The ZVP3310A is manufactured in India.

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