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onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 3.7 A, 20 V Enhancement, 6-Pin MLP FDMA1023PZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 2mm |
| Model | FDMA1023PZ |
| Width | 2mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-6213Brand: onsemiManufacturers Part No.: FDMA1023PZ |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 195mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 8.6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.8V |
| Transistor Configuration | Isolated |
Key Features
- The MOSFET features an isolated transistor configuration optimized for efficient power switching.
- It has a maximum power dissipation of 1.5 W and operates within a temperature range of -55°C to 150°C.
- The device offers a maximum drain-source resistance of 195 mΩ with a typical gate charge of 8.6 nC at Vgs.
- Gate-source voltage rating is ±8 V with a forward voltage of -0.8 V and a compact 2 x 2 x 0.75 mm package footprint.
- Ideal for applications requiring low gate charge and fast switching performance in surface-mount designs.
- Suitable for industrial, electronic component manufacturing, and power management systems.
Product Description
onsemi FDMA1023PZ Isolated PowerTrench 2 Type P-Channel MOSFET is a highly efficient, dual element MOSFET designed for power switch applications requiring low gate charge, low on-resistance, and high switching speed.
This transistor operates with a maximum continuous drain current of 3.7 A and withstands drain-source voltages up to 20 V in an enhancement-mode isolated configuration. Featuring a compact 6-pin MLP package measuring 2 mm by 2 mm by 0.75 mm, this MOSFET optimizes space savings on PCB boards and supports surface mount assembly.
Operating temperature ranges from -55 °C up to 150 °C, making it reliable for rugged industrial and electronic component applications.
The PowerTrench series integrates shielded gate technology that improves the figure of merit (FOM) and reduces switching losses, enhancing overall system efficiency and power density in electronic power supplies.
The device has a maximum power dissipation of 1.5 W, a maximum gate-source voltage of ±8 V, and a typical gate charge of 8.6 nC supporting fast switching performance. The forward voltage is -0.8 V and the transistor features a maximum drain-source resistance of 195 mΩ, enabling efficient conduction characteristics.
Each chip contains two MOSFET elements providing flexibility in circuit design and power handling. This MOSFET is ideal for industrial electronic circuits, power management modules, and other low voltage power switching applications requiring high reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.7 A.
It can withstand a maximum drain-source voltage of 20 V.
The typical gate charge at Vgs is 8.6 nC.
This MOSFET comes in a 6-pin MLP package with dimensions of 2 mm x 2 mm x 0.75 mm.
The operating temperature range is from -55 °C to 150 °C.
The maximum power dissipation for this device is 1.5 W.
The maximum gate-source voltage rating is ±8 V.
The maximum drain-source resistance is 195 mΩ.
It features an isolated transistor configuration.
Each chip contains two MOSFET elements.
This MOSFET is suitable for industrial electronic circuits, power management modules, and low voltage power switching applications.
The channel type is P-channel.
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