Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon OptiMOS 3 N-Channel MOSFET 20A 60V Enhancement Mode 8-Pin TDSON BSZ100N06LS3GATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 3.4mm
Model BSZ100N06LS3GATMA1
Width 3.4mm
Mount Type Surface
Series OptiMOS 3
Maximum Operating Temperature 150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 20A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 17.9mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current of 20 amperes for robust power handling.
  • Maximum drain-source voltage rating of 60 volts for reliable operation.
  • 8-pin TDSON package suitable for surface mount mounting.
  • Extremely low on-resistance of 17.9 milliohms to minimize power loss.
  • Operating temperature range from -55°C up to 150°C ensuring durability.
  • Typical gate charge of 15 nanocoulombs providing fast switching capability.
  • Maximum power dissipation of 2.1 watts for thermal management.
  • Enhancement mode channel operation optimized for efficiency.

Product Description

Infineon BSZ100N06LS3GATMA1 is an N-Channel OptiMOS 3 power MOSFET designed for high efficiency switching applications in power management and electronic circuits. It features a 60V maximum drain-source voltage and a maximum continuous drain current of 20A, making it suitable for various industrial, computing and power supply applications requiring energy efficient DC/DC conversion.

This MOSFET utilizes enhancement mode channel technology with a very low on-resistance of 17.9mΩ to reduce conduction losses. The typical gate charge of 15nC enables fast switching performance ideal for SMPS (Switched Mode Power Supplies) and other power conversion circuits. The 8-pin TDSON surface mount package provides a compact footprint with excellent thermal dissipation properties.

The device operates reliably over a wide temperature range from -55°C to 150°C, supporting demanding industrial and automotive environments. Its maximum power dissipation rating of 2.1W facilitates effective thermal management in densely packed electronic systems.

Infineon's OptiMOS 3 series is optimized for applications needing higher power density and enhanced energy efficiency in limited space. It complies with RoHS environmental standards and features lead-free plating, promoting sustainability.

This component is extensively used in industrial automation, telecom power supplies, consumer electronics power regulation, automotive electronics, and other manufacturing sectors needing reliable power MOSFETs.

Maximum continuous drain current of 20 amperes. Drain-source voltage of up to 60 volts. Compact 8-pin TDSON package for surface mounting. Low on-resistance for efficient power conversion. High operating temperature range supports harsh conditions.

Fast switching with low gate charge. Compliance with environmental RoHS standards. Application suited for industrial, automotive, and power electronic systems. Explore more MOSFETs and power semiconductor components at EnvMart for enhanced industrial and electronic designs.

Infineon OptiMOS 3 N-Channel MOSFET 20A 60V Enhancement Mode 8-Pin TDSON BSZ100N06LS3GATMA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 20 amperes.

This MOSFET has a maximum drain-source voltage rating of 60 volts.

It features an extremely low on-resistance of 17.9 milliohms, which helps minimize power loss.

The typical gate charge is 15 nanocoulombs, providing fast switching capability.

The operating temperature range is from -55°C to 150°C, ensuring reliability in various environments.

It comes in an 8-pin TDSON package, suitable for surface mounting.

The maximum power dissipation rating is 2.1 watts, facilitating effective thermal management.

The dimensions are 3.4mm in length and width, and 1.1mm in height.

This model features an N-channel type, optimized for enhancement mode operation.

It is extensively used in industrial automation, telecom power supplies, consumer electronics power regulation, and automotive electronics.

The maximum gate-source voltage is -20V to +20V.

Yes, it complies with RoHS environmental standards and features lead-free plating.

Related Products

Other Products from this brand

Recently Viewed Products

$0.63
$0.61 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.63
$0.61
Tax included