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Vishay Type P-Channel MOSFET 110 A 60 V Enhancement 3-Pin TO-263 SUM110P06-07L-E3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.41mm |
| Model | SUM110P06-07L-E3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 710-5060PBrand: VishayManufacturers Part No.: SUM110P06-07L-E3 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.0088Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 230nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Efficient P-Channel MOSFET designed for surface mount applications.
- Enhancement mode channel with a maximum drain-source resistance of 0.0088 ohms.
- Supports maximum power dissipation of 375 W with wide operating temperature range from -55°C to 175°C.
- Compact dimensions with 10.41 mm length and 9.65 mm width.
- Features typical gate charge of 230 nC and gate source voltage tolerance of ±20 V.
- Low forward voltage of 1.5 V enhances conduction efficiency.
- Robust TrenchFET® technology for excellent switching performance.
Product Description
Vishay SUM110P06-07L-E3 Type P-Channel MOSFET is a high-performance enhancement mode transistor suitable for industrial and power electronics applications requiring efficient and reliable switching at currents up to 110 A and voltage ratings of 60 V.
Housed in a TO-263 package with low thermal resistance, it enables efficient heat dissipation and surface mounting for compact system designs. The device supports a maximum power dissipation of 375 W, making it suitable for demanding power circuits.
This MOSFET features a maximum drain-source resistance (Rds(on)) of 0.0088 ohms, minimizing conduction losses and improving overall system efficiency. The gate charge of 230 nC at Vgs ensures rapid switching, which is critical in high-frequency power conversion and motor control applications.
The device operates reliably across a wide temperature range from -55°C up to 175°C, ensuring stable performance in harsh industrial environments. Its forward voltage of 1.5 V further reduces power loss during conduction.
Typical applications include power management circuits, DC-DC converters, motor drivers, and electronic switching in diverse sectors such as manufacturing, industrial automation, and telecommunications.
Efficient P-Channel MOSFET designed for surface mount applications. Enhancement mode channel with a maximum drain-source resistance of 0.0088 ohms. Supports maximum power dissipation of 375 W with wide operating temperature range from -55°C to 175°C.
Compact dimensions with 10.41 mm length and 9.65 mm width. Features typical gate charge of 230 nC and gate source voltage tolerance of ±20 V. Low forward voltage of 1.5 V enhances conduction efficiency. Robust TrenchFET® technology for excellent switching performance.
Choose this Vishay MOSFET for reliable power switching solutions in industrial, laboratory, manufacturing, and HVAC systems. Explore more electronic components and discrete semiconductors at EnvMart for your project needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SUM110P06-07L-E3 is 110 A.
This model has a maximum drain-source voltage rating of 60 V.
It supports a maximum power dissipation of 375 W.
The dimensions of the TO-263 package are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height.
The typical gate charge at Vgs is 230 nC.
The maximum drain-source resistance (Rds(on)) is 0.0088 ohms.
It operates reliably within a temperature range from -55°C to 175°C.
The forward voltage is 1.5 V, which enhances conduction efficiency.
This MOSFET is designed for surface mounting.
The gate-source voltage tolerance is ±20 V.
It is suitable for power management circuits, DC-DC converters, motor drivers, and electronic switching in various sectors.
This device features a P-channel enhancement mode channel.
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