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Vishay Type P-Channel MOSFET, 110 A, 60 V Enhancement Mode, 3-Pin TO-263 Package SUM110P06-07L-E3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 4.83mm
Length 10.41mm
Model SUM110P06-07L-E3
Width 9.65mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
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RS Stock No. 710-5060Brand: VishayManufacturers Part No.: SUM110P06-07L-E3
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 110A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.0088Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 375W
Typical Gate Charge Qg @ Vgs 230nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • TrenchFET® power MOSFET with low thermal resistance for efficient heat dissipation.
  • Enhancement mode device suitable for power switching applications.
  • Maximum power dissipation rating of 375 W for high power handling.
  • Wide operating temperature range from -55°C to 175°C.
  • Low maximum drain-source resistance of 0.0088 Ω to minimize conduction losses.
  • Typical gate charge of 230 nC for fast switching performance.
  • Supports gate-source voltages up to ±20 V.

Product Description

Vishay SUM110P06-07L-E3 is a P-Channel MOSFET featuring a maximum continuous drain current of 110 A and a drain-source voltage rating of 60 V. Packaged in a rugged 3-pin TO-263 surface mount format, this device provides excellent performance for power electronics applications.

The TrenchFET® design offers low thermal resistance, enabling effective heat dissipation and operation at power dissipation up to 375 W. Its enhancement mode operation ensures low conduction losses with a maximum Rds(on) of 0.0088 Ω.

This MOSFET supports a maximum gate-source voltage of ±20 V and has a typical gate charge of 230 nC, delivering fast switching capability suitable for high-frequency circuits. The device can operate reliably within a broad temperature range from -55°C to 175°C, making it ideal for industrial, automotive (non-qualified), and commercial power management systems.

Physical dimensions are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height, compatible with standard surface mount assembly processes. TrenchFET® technology ensures low thermal resistance and high efficiency. High continuous current rating supports demanding load requirements.

Wide temperature range enhances reliability across diverse environments. Compact TO-263 package simplifies PCB layout and integration. Low gate charge improves switching speed and reduces losses.

This Vishay MOSFET is commonly used in power supply circuits, motor control, DC-DC converters, and general switching applications in electronic equipment manufacturing and industrial automation.

Explore EnvMart's extensive catalog of power semiconductors and MOSFETs to find compatible components and accessories for your projects.

Explore more products in our Power MOSFET category.

Vishay Type P-Channel MOSFET, 110 A, 60 V Enhancement Mode, 3-Pin TO-263 Package SUM110P06-07L-E3
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Frequently Asked Questions

The Vishay SUM110P06-07L-E3 has a maximum continuous drain current of 110 A.

This model has a maximum drain-source voltage rating of 60 V.

The maximum power dissipation rating for this MOSFET is 375 W.

The typical gate charge for the Vishay SUM110P06-07L-E3 is 230 nC.

The dimensions of the TO-263 package are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height.

This MOSFET supports a maximum gate-source voltage of ±20 V.

The Vishay SUM110P06-07L-E3 operates reliably within a temperature range from -55°C to 175°C.

The maximum drain-source resistance (Rds(on)) for this model is 0.0088 Ω.

This MOSFET is designed for surface mounting.

It is commonly used in power supply circuits, motor control, DC-DC converters, and general switching applications.

The Vishay SUM110P06-07L-E3 is a P-Channel MOSFET.

This model operates in enhancement mode, which ensures low conduction losses.

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