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Vishay P-Channel Power MOSFET Surface-Mount, -1.8 A Drain Current, -60 V Drain-Source Voltage, 3.1 W Power IRFL9014TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.45mm |
| Length | 6.7mm |
| Model | IRFL9014TRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IRFL9014 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 710-4654PBrand: VishayManufacturers Part No.: IRFL9014TRPBF |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -1.8A |
| Maximum Drain Source Voltage Vds | -60V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5.5V |
Key Features
- The SOT-223 package supports compact PCB layouts for surface mounting.
- Maximum power dissipation of 3.1 W enables stable thermal management.
- Low on-resistance Rds(on) of 500 milliohms minimizes conduction losses.
- Typical gate charge of 12 nC allows efficient switching performance.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Forward voltage drop of -5.5 V facilitates predictable conduction behavior.
- Four-pin configuration supports flexible gate, drain, and source routing.
- RoHS compliant to meet environmental standards.
Product Description
Vishay IRFL9014TRPBF is a P-Channel enhancement mode Power MOSFET intended for surface-mount power management and switching applications. It offers a maximum drain-source voltage of -60 V and a continuous drain current rating of -1.8 A, making it suitable for moderate power loads in compact electronic devices.
The device features a low on-resistance Rds(on) of 500 mΩ which reduces conduction losses and improves efficiency in power switching circuits. It has a typical gate charge of 12 nC at Vgs, enabling fast switching transitions and efficient gate drive control. The MOSFET’s maximum power dissipation rating is 3.1 W, allowing it to handle sustained thermal stress when mounted properly.
This MOSFET uses a SOT-223 surface-mount package with four pins, facilitating integration into densely packed circuit boards where space and thermal management are critical. It operates reliably across a wide temperature range, from -55°C to +150°C, and offers gate-source voltage limits of -20 V to +20 V, ensuring safe gate drive design.
Applications include low-side and high-side switching, power-rail polarity control, load switching in battery-powered systems, level shifting, and gate driving in compact industrial, consumer electronics, automotive electronics, and HVAC control circuits. The RoHS compliant construction confirms adherence to environmental directives.
The SOT-223 package facilitates compact surface-mount PCB assembly. Ensures robust operation in industrial and commercial thermal conditions. Suitable for power management in battery-operated and thermally constrained designs.
Optimizes switching efficiency with low gate charge and low on-resistance. Compliant with environmental RoHS standards for sustainable electronics. Explore further products within the Vishay MOSFET range on EnvMart for comprehensive power management solutions tailored to electronic component requirements.
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Frequently Asked Questions
The maximum drain-source voltage of this model is -60 V.
It has a continuous drain current rating of -1.8 A.
The maximum power dissipation of this MOSFET is 3.1 W.
The on-resistance Rds(on) is 500 milliohms, which helps minimize conduction losses.
The typical gate charge is 12 nC at Vgs, allowing for efficient switching performance.
This MOSFET operates within a temperature range from -55°C to +150°C.
It comes in a SOT-223 surface-mount package, which is suitable for compact PCB layouts.
This model has a four-pin configuration, facilitating flexible routing for gate, drain, and source.
The forward voltage drop is -5.5 V, which aids in predictable conduction behavior.
The maximum gate-source voltage limits are -20 V to +20 V.
Yes, this MOSFET is RoHS compliant, meeting environmental standards.
It is suitable for low-side and high-side switching, power-rail polarity control, and load switching in battery-powered systems.
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