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Nexperia Small Signal Schottky Diode 50 V 200 mA Through Hole DO-34 BAT86,113

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Nexperia Small Signal Schottky Diode 50 V 200 mA Through Hole DO-34 BAT86,113

Name: Nexperia Small Signal Schottky Diode 50 V 200 mA Through Hole DO-34 BAT86,113
Brand: Nexperia
SKU: 227615
Price: 0.27 USD
Availability: InStock

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Category Schottky Diodes Brand Nexperia Condition New

Specifications

Country of Origin	China
Diameter	1.6mm
Brand	Nexperia
Height	1.6mm
Length	3.04mm
Model	BAT86,113
Width	1.6mm
Mount Type	Through Hole
Series	BAT86
Maximum Operating Temperature	125°C
Package Type	DO-34
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Continuous Forward Current If	200mA
Peak Reverse Repetitive Voltage Vrrm	50V
Diode Configuration	Single
Rectifier Type	Small Signal
Peak Reverse Current Ir	5μA
Peak Non-Repetitive Forward Surge Current Ifsm	5A
Maximum Forward Voltage Vf	900mV
Peak Reverse Recovery Time trr	4ns
NXP Diode, BAT81Brand	NXP

Key Features

High efficiency Schottky barrier diode optimized for low forward voltage drop.
Maximum continuous forward current is 200 mA for reliable operation.
Peak reverse repetitive voltage rated at 50 V ensures suitability for low-voltage applications.
Compact 2-pin DO-34 package with dimensions 3.04 mm length and 1.6 mm diameter.
Low leakage current and negligible switching losses for high performance in power-sensitive circuits.
Wide operating temperature range from -65°C to 125°C for industrial robustness.
Peak non-repetitive surge current of 5 A for transient protection capability.
Fast recovery time of 4 ns suitable for high-speed switching applications.

Product Description

Nexperia BAT86,113 is a small signal Schottky diode designed for high efficiency and low forward voltage drop in electronic circuits. It features a through-hole mount type with a DO-34 package and a compact form factor measuring 3.04 mm in length and 1.6 mm in diameter, making it suitable for space-constrained designs.

The diode supports a maximum continuous forward current of 200 mA and can withstand a peak reverse repetitive voltage of 50 V, catering to low-voltage applications requiring fast switching and low power loss. Its maximum forward voltage is 900 mV, ensuring minimal conduction losses in circuits.

Engineered for industrial and commercial use, the BAT86,113 provides reliable performance across a broad temperature range from -65°C to 125°C. The diode's peak non-repetitive forward surge current rating of 5 A helps protect the component during transient conditions. With a peak reverse recovery time of just 4 ns, it is optimized for high-speed switching scenarios.

Applications span a variety of fields including power rectification, signal processing, and voltage clamping within electronic devices. The small signal configuration provides low capacitance and reduced switching losses, advantageous for high-frequency circuit designs.

Manufactured in China, this diode meets essential industrial standards for discrete semiconductor components though no additional certifications are specified. High efficiency Schottky barrier diode optimized for low forward voltage drop.

Maximum forward current rating of 200 mA with a 50 V reverse voltage rating. 2-pin DO-34 through-hole package measuring 3.04 mm by 1.6 mm. Wide operating temperature range from -65°C to 125°C for durability. Fast 4 ns reverse recovery time suitable for high-speed switching.

Low leakage current and negligible power switching losses. Peak forward surge current of 5 A for transient load tolerance. Explore the Nexperia family of high-performance Schottky Diodes on EnvMart for reliable semiconductor solutions in your electronic designs.