DiodesZetex N-Channel MOSFET, 2.5 A, 60 V Enhancement, Surface Mount SOT-89, 3-Pin ZXMN6A07ZTA

DiodesZetex ZXMN6A07ZTA is an N-Channel enhancement mode MOSFET designed for efficient switching in electronic circuits. This device supports a maximum continuous drain current of 2.5 A and a drain-source voltage of 60 V, making it suitable for various power management, electronic switching, and amplification applications.

The transistor is housed in a compact surface-mount SOT-89 package with three pins, enabling easy integration into printed circuit boards (PCBs) where space saving is critical. The low maximum drain-source on-resistance of 250 milliohms ensures minimal conduction losses, which improves overall device efficiency and thermal performance.

Featuring a maximum power dissipation of 2.6 W, this MOSFET supports higher load conditions while maintaining reliable operation. The typical gate charge of 3.2 nC allows for fast switching speeds, essential in high-frequency power converters and electronic driver circuits. Additionally, the device can tolerate gate-source voltages up to ±20 V, enhancing its robustness against voltage surges.

Physical dimensions of the MOSFET measure 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height, facilitating compact designs in consumer electronics, automotive electronics, industrial controls, and telecommunications equipment.

Enhancement mode N-channel MOSFET. 2.5 A maximum continuous drain current. 60 V maximum drain-source voltage. SOT-89 surface mount package with 3 pins. Low on-resistance (250 mΩ) and typical gate charge (3.2 nC). Maximum power dissipation of 2.6 W.

Maximum gate-source voltage ±20 V. Compact physical dimensions for space-saving PCBs. Forward voltage of 950 mV improves efficiency. This device is ideal for power regulation, switching, and amplification in industrial, automotive, and consumer electronic applications.

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