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DiodesZetex P-Channel MOSFET, 280 mA, 60 V, Enhancement Mode, 3-Pin E-Line ZVP2106A

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZVP2106A
Width 2.41mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 280mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 700mW
Typical Gate Charge Qg @ Vgs 2.2nC
Maximum Gate Source Voltage Vgs -20, +20V
P-Channel MOSFET Transistor, 280 mA, 60 V, 4-Pin SOT-223 Diodes Inc ZVP2106Brand DiodesZetex

Key Features

  • Operates in enhancement mode ensuring efficient switching performance.
  • Supports a maximum drain-source resistance of 5 ohms for reliable conductivity.
  • Designed for through-hole mounting facilitating easy PCB integration.
  • Functions effectively within a temperature range from -55°C to 150°C.
  • Features a typical gate charge of 2.2 nC at rated gate-source voltage conditions.
  • Maximum gate-source voltage rating is ±20 V ensuring controlled operation.
  • Compact dimensions measuring 4.77 mm length, 2.41 mm width, and 4.01 mm height.
  • Complies with automotive standard AEC-Q101, suitable for automotive applications.

Product Description

DiodesZetex ZVP2106A is a P-Channel MOSFET transistor designed for electronic and semiconductor applications requiring reliable power switching at up to 280 mA drain current and 60 V drain-source voltage. This device comes in an E-Line 3-pin through-hole package that allows for straightforward assembly on printed circuit boards.

The transistor operates in enhancement mode, providing efficient and dependable switching capabilities, complemented by a maximum drain-source resistance of 5 Ω. Its gate-source voltage range of -20 to +20 V and typical gate charge of 2.2 nC make it ideal for precise control in power management circuits.

Suitable for use in automotive and industrial electronic systems, the ZVP2106A withstands operating temperatures from -55°C to 150°C, conforming to the rigorous AEC-Q101 automotive standard. Its compact physical dimensions and durable construction ensure it fits well into space-constrained designs.

This MOSFET is apt for applications in power switching, signal amplification, and electronic control circuits within industrial, automotive, and laboratory environments. Operates in enhancement mode for efficient switching performance.

Maximum drain-source resistance of 5 ohms ensures minimal power loss. Through-hole E-Line package enables secure mounting on PCBs. Functional across a wide temperature range (-55°C to 150°C). Typical gate charge of 2.2 nC allows for precise gate control.

High gate-source voltage tolerance of ±20 V supports versatile applications. Compact size with dimensions (LxWxH): 4.77 mm x 2.41 mm x 4.01 mm. Meets automotive standard AEC-Q101 for reliability in automotive circuits. Explore the broad category of discrete semiconductors for compatible MOSFETs and related components at EnvMart, perfect for your design and manufacturing needs.

DiodesZetex P-Channel MOSFET, 280 mA, 60 V, Enhancement Mode, 3-Pin E-Line ZVP2106A
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Frequently Asked Questions

The maximum continuous drain current for this model is 280 mA.

The maximum drain-source voltage rating is 60 V.

The typical gate charge at rated gate-source voltage conditions is 2.2 nC.

The dimensions of this model are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height.

The maximum gate-source voltage rating is ±20 V.

The maximum drain-source resistance is 5 ohms.

This MOSFET can operate within a temperature range from -55°C to 150°C.

It is designed for through-hole mounting, facilitating easy PCB integration.

It complies with the AEC-Q101 automotive standard.

The channel type of this model is P-Channel.

The maximum power dissipation capability is 700 mW.

It is suitable for applications in power switching, signal amplification, and electronic control circuits within automotive and industrial systems.

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