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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVP2106A |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 280mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Typical Gate Charge Qg @ Vgs | 2.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| P-Channel MOSFET Transistor, 280 mA, 60 V, 4-Pin SOT-223 Diodes Inc ZVP2106Brand | DiodesZetex |
DiodesZetex ZVP2106A is a P-Channel MOSFET transistor designed for electronic and semiconductor applications requiring reliable power switching at up to 280 mA drain current and 60 V drain-source voltage. This device comes in an E-Line 3-pin through-hole package that allows for straightforward assembly on printed circuit boards.
The transistor operates in enhancement mode, providing efficient and dependable switching capabilities, complemented by a maximum drain-source resistance of 5 Ω. Its gate-source voltage range of -20 to +20 V and typical gate charge of 2.2 nC make it ideal for precise control in power management circuits.
Suitable for use in automotive and industrial electronic systems, the ZVP2106A withstands operating temperatures from -55°C to 150°C, conforming to the rigorous AEC-Q101 automotive standard. Its compact physical dimensions and durable construction ensure it fits well into space-constrained designs.
This MOSFET is apt for applications in power switching, signal amplification, and electronic control circuits within industrial, automotive, and laboratory environments. Operates in enhancement mode for efficient switching performance.
Maximum drain-source resistance of 5 ohms ensures minimal power loss. Through-hole E-Line package enables secure mounting on PCBs. Functional across a wide temperature range (-55°C to 150°C). Typical gate charge of 2.2 nC allows for precise gate control.
High gate-source voltage tolerance of ±20 V supports versatile applications. Compact size with dimensions (LxWxH): 4.77 mm x 2.41 mm x 4.01 mm. Meets automotive standard AEC-Q101 for reliability in automotive circuits. Explore the broad category of discrete semiconductors for compatible MOSFETs and related components at EnvMart, perfect for your design and manufacturing needs.
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