Infineon OptiMOS P Type P-Channel MOSFET 310mA 20V 3-Pin SC-70 BSS223PWH6327XTSA1

Infineon BSS223PWH6327XTSA1 is a P-Type P-Channel MOSFET designed for efficient electronic switching and amplification. Rated for a maximum continuous drain current of 310mA and a drain-source voltage of 20V, it is ideal for low voltage applications. The device features a low on-resistance of 2.1Ω and a maximum power dissipation of 250mW, supporting enhanced efficiency and reduced power loss in electronic circuits.

This MOSFET is housed in a compact 3-pin SC-70 surface mount package, facilitating easy integration into compact assemblies. It operates in enhancement mode with a typical gate charge of 0.5nC, offering high-speed switching capabilities. The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for automotive, industrial, and demanding environments.

Certified to the AEC-Q101 standard, the MOSFET meets stringent automotive reliability requirements, making it suitable for driving loads in automotive systems and power management within battery management circuits. It is also applicable in consumer electronics for amplifiers and automation systems where efficient and reliable switching is required.

Maximum continuous drain current of 310mA at 25°C. Drain-source voltage rating of 20V for low voltage circuits. Low on-resistance of 2.1Ω reduces conduction losses. Supports operation temperatures up to 150°C. Complies with automotive AEC-Q101 standard for durability.

Fast switching with low typical gate charge of 0.5nC. Compact SC-70 surface mount package with 3 pins. Forward voltage drop of -1V minimizes power dissipation.

This MOSFET is an essential component in automotive electronics, power management circuits, amplifiers, and automation systems requiring efficient, compact, and reliable semiconductor switching devices. For more electronic components including MOSFETs, explore the comprehensive category at EnvMart.