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Vishay N-Channel Power MOSFET, 3.6 A, 900 V, Enhancement Mode, 3-Pin TO-220AB IRFBF30PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBF30PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS 2002/95/EC |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 3.7Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 78nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
| N-channel MOSFET,IRFBF30 3.6A 900VBrand | Vishay |
Key Features
- Enhancement mode device providing reliable switching performance.
- Packaged in 3-pin TO-220AB for easy through-hole mounting.
- Maximum power dissipation of 125 W enables efficient heat handling.
- Operating temperature range from -55°C to 150°C suits industrial environments.
- Typical gate charge of 78 nC ensures fast switching speeds.
- Low maximum drain-source resistance of 3.7 Ω reduces conduction losses.
- Maximum gate-source voltage rating of ±20 V for robust operation.
Product Description
Vishay IRFBF30PBF is an N-Channel Power MOSFET optimized for high-voltage applications requiring continuous drain current of 3.6 A and a drain-source voltage of 900 V. This enhancement mode transistor is housed in a 3-pin TO-220AB package, enabling easy integration through through-hole mounting.
With a maximum power dissipation capacity of 125 W, the device efficiently handles high power loads in demanding industrial and commercial power electronics environments. The MOSFET exhibits a typical gate charge of 78 nC at specified gate voltage, facilitating rapid switching with minimal losses. A low drain-source resistance of 3.7 Ω ensures energy-efficient conduction.
The device can operate reliably over a wide temperature range from -55°C up to 150°C, making it suitable for applications in harsh operating conditions including industrial controls, power management modules, and converter circuits.
Physical dimensions are compact with a length of 10.41 mm, height of 9.01 mm, and width of 4.7 mm, supporting space-constrained PCB assemblies. Enhancement mode N-Channel MOSFET for efficient switching. High voltage rating of 900 V suitable for power conversion.
Robust power dissipation of 125 W for demanding applications. Wide temperature tolerance from -55°C to 150°C for versatility. Fast switching supported by 78 nC typical gate charge. Compact TO-220AB package simplifies PCB integration.
Low Rds(on) minimizes conduction losses improving efficiency. Maximum gate-source voltage of ±20 V ensures protection.
This power MOSFET is ideal for usage in industrial power supplies, HVAC equipment, manufacturing automation systems, and other electronic components requiring reliable high voltage and current handling capabilities. Vishay’s semiconductor quality provides long-term operational stability and performance.
Explore more items in the Power MOSFET category on EnvMart for comprehensive solutions to your power electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.6 A.
This N-Channel Power MOSFET has a maximum drain-source voltage rating of 900 V.
It has a maximum power dissipation capacity of 125 W, allowing it to handle high power loads efficiently.
The typical gate charge for this model is 78 nC, which facilitates rapid switching.
The physical dimensions of the TO-220AB package are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
This device operates reliably over a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating for this MOSFET is ±20 V.
The maximum drain-source resistance (Rds) is 3.7 Ω, which helps reduce conduction losses.
This model supports through-hole mounting, making it easy to integrate into PCB assemblies.
The MOSFET complies with RoHS 2002/95/EC standards.
It is suitable for applications in industrial power supplies, HVAC equipment, and manufacturing automation systems.
This model belongs to the IRFBE series of N-Channel Power MOSFETs.
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