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Vishay P-Channel Power MOSFET -1.8 A -400 V Enhancement 3-Pin IPAK IRFU9310PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFU9310PBF |
| Width | 2.38mm |
| Mount Type | Through Hole |
| Series | IRFU9310 |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -1.8A |
| Maximum Drain Source Voltage Vds | -400V |
| Maximum Drain Source Resistance Rds | 7Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -4V |
Key Features
- Supports maximum continuous drain current of -1.8 A for low-current load applications.
- Provides drain-source voltage rating of -400 V for robust high-voltage switching.
- Compact 3-pin IPAK through-hole package suitable for prototyping and conventional soldering.
- Maximum power dissipation of 50 W enables effective thermal handling with suitable heatsinking.
- Low drain-source resistance of 7 Ω helps reduce conduction losses at low currents.
- Typical gate charge of 13 nC at 20 V Vgs ensures predictable switching performance.
- Operates reliably across a broad temperature range from -55°C to 150°C.
- RoHS compliant power MOSFET optimized for industrial and electronic component use.
Product Description
Vishay IRFU9310PBF P-Channel Power MOSFET is a high-voltage enhancement transistor designed to handle continuous currents up to -1.8 A and drain-source voltages up to -400 V. Packaged in a compact 3-pin IPAK through-hole form, it is ideal for easy prototyping and soldering on drilled boards for industrial, electronic, and power management applications.
This device delivers up to 50 W maximum power dissipation, requiring appropriate thermal management in designs to ensure junction temperature limits are not exceeded. Its low drain-source resistance of 7 Ω reduces conduction losses, improving system efficiency especially in low-current load switching.
The MOSFET features a typical gate charge of 13 nC at 20 V Vgs, allowing for predictable and efficient switching performance controlled via compatible gate drivers. Operating reliably in temperature ranges from -55°C to 150°C, it suits harsh environment industrial applications.
It complies with RoHS standards and fits applications including valve or actuator control in industrial systems, discrete switching stages in power supplies, telecom line protection in legacy equipment, and low-current instrumentation load switching. The through-hole IPAK package supports conventional mounting on prototype PCBs.
While suitable for a wide range of industrial electronics, this MOSFET is not specified as automotive grade; designers must assess environmental qualifications before automotive use.
Supports maximum continuous drain current of -1.8 A for low-current loads. Drain-source voltage rating of -400 V for high-voltage switching applications. Compact IPAK through-hole 3-pin package for easy mounting and prototyping.
Maximum power dissipation of 50 W requires suitable heatsinking. Drain-source resistance of 7 Ω minimizes conduction losses. Gate charge of 13 nC at 20 V Vgs enables predictable switching. Operating temperature range from -55°C to 150°C suits elevated temperature environments.
RoHS compliant to meet environmental standards. Ideal for valve/actuator control, telecom protection, power supply switching. Not automotive grade; evaluate system requirements before vehicle use.
Explore more high-quality Power MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart for industrial, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is -1.8 A, suitable for low-current load applications.
This MOSFET has a drain-source voltage rating of -400 V, making it suitable for high-voltage switching applications.
It is packaged in a compact 3-pin IPAK through-hole package, which facilitates easy prototyping and soldering.
The maximum power dissipation for the IRFU9310PBF is 50 W, which requires appropriate thermal management in designs.
The drain-source resistance is 7 Ω, which helps minimize conduction losses at low currents.
The typical gate charge for this model at 20 V Vgs is 13 nC, ensuring predictable switching performance.
This MOSFET operates reliably across a broad temperature range from -55°C to 150°C.
Yes, the IRFU9310PBF is RoHS compliant, meeting environmental standards for hazardous substances.
It is suitable for valve or actuator control, discrete switching stages in power supplies, and telecom line protection in legacy equipment.
The dimensions of this MOSFET are 6.73 mm in length, 2.38 mm in width, and 6.22 mm in height.
The maximum gate-source voltage for this model is -20 V to +20 V.
This device utilizes a P-channel type, designed for enhancement mode operation.
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