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Vishay N-Channel Power MOSFET, Enhancement Mode, 1.7 A, 900 V, 3-Pin TO-220AB IRFBF20PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBF20PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS 2002/95/EC |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
| N-channel MOSFET,IRFBF20 1.7A 900VBrand | Vishay |
Key Features
- This MOSFET provides low maximum drain-source resistance of 8 ohms for efficient switching.
- Maximum power dissipation is 54 W, supporting robust applications.
- Typical gate charge is 38 nC at Vgs, enabling fast switching performance.
- Operates in a temperature range from -55°C to 150°C for varied environmental conditions.
- The component features a forward voltage of 1.5 V and a maximum gate-source voltage of ±20 V.
- Its compact physical size is 10.41 mm length, 4.7 mm width, and 9.01 mm height.
- Built for through-hole mounting with 3 pins, this device conforms to RoHS 2002/95/EC standards.
Product Description
Vishay IRFBF20PBF is an N-Channel Power MOSFET designed for high-voltage, high-current switching applications. Featuring enhancement mode operation with a maximum continuous drain current of 1.7 A and a drain-source voltage of 900 V, this device is housed in a 3-pin TO-220AB package suitable for through-hole mounting.
This MOSFET offers a maximum power dissipation of 54 watts, allowing it to operate efficiently under demanding load conditions. The typical gate charge of 38 nanocoulombs at gate-source voltage facilitates fast and precise switching, enhancing performance in power electronics circuits.
Engineered to function across a wide temperature range from -55°C to 150°C, it ensures reliability in varied industrial and commercial environments. Its maximum gate-source voltage rating of ±20 volts and a forward voltage of 1.5 volts provide secure electrical characteristics for diverse control requirements.
The compact dimensions (length 10.41 mm, width 4.7 mm, height 9.01 mm) and through-hole mounting design make it easy to integrate into existing PCB layouts. It complies with RoHS Directive 2002/95/EC, aligning with environmental and safety standards.
This Power MOSFET is ideal for industrial power management, motor control, signal amplification, and switching applications in electronic equipment, HVAC systems, manufacturing automation, and other commercial electrical systems.
This MOSFET provides low maximum drain-source resistance of 8 ohms for efficient switching. Maximum power dissipation is 54 W, supporting robust applications. Typical gate charge is 38 nC at Vgs, enabling fast switching performance.
Operates in a temperature range from -55°C to 150°C for varied environmental conditions. The component features a forward voltage of 1.5 V and a maximum gate-source voltage of ±20 V. Its compact physical size is 10.41 mm length, 4.7 mm width, and 9.01 mm height.
Built for through-hole mounting with 3 pins, this device conforms to RoHS 2002/95/EC standards. Explore the full Vishay semiconductor range on EnvMart for quality power management components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.7 A.
It has a maximum drain-source voltage rating of 900 V.
The maximum power dissipation for this MOSFET is 54 W.
The typical gate charge at gate-source voltage (Vgs) is 38 nC.
It operates within a temperature range of -55°C to 150°C.
The dimensions are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
This device is designed for through-hole mounting with 3 pins.
The maximum gate-source voltage is ±20 V.
The forward voltage is rated at 1.5 V.
It conforms to RoHS Directive 2002/95/EC standards.
This model features an N-channel type.
The country of origin for this MOSFET is India.
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