Vishay N-Channel MOSFET TO-220 500 V 2.5 A Enhancement Mode 50 W Power Dissipation IRF820APBF

Vishay IRF820APBF is a high-performance N-Channel MOSFET designed for power switching and amplification in industrial and electronic applications. This device operates with a continuous drain current of 2.5 A and can withstand drain-source voltages up to 500 V, making it suitable for medium to high voltage circuits.

The enhancement channel MOSFET comes in a TO-220 package featuring a through-hole mounting configuration with 3 pins, enabling easy integration into PCBs or power management systems. Its low gate charge (17 nC) facilitates efficient and fast switching, reducing power loss in switching operations.

The IRF820APBF power MOSFET ensures robustness with a maximum power dissipation rating of 50 W and a wide operating temperature range between -55°C and 150°C, suitable for demanding industrial environments. It supports a gate-source voltage rating between -30 V and +30 V, providing stable gate control and switching dynamics.

Physical dimensions of 10.41 mm length, 4.7 mm width, and 9.01 mm height offer a compact form factor allowing versatile design implementations. Its typical forward voltage drop is 1.6 V, making it efficient in conduction with minimal losses.

Maximum continuous drain current: 2.5 A ensures consistent power handling. Drain-source voltage rating of 500 V supports high voltage circuits. Low gate charge reduces switching power losses. Wide operating temperature range increases reliability in harsh environments.

Robust through-hole TO-220 package for ease of mounting. Typical forward voltage optimizes conduction efficiency.

This MOSFET is widely applicable in power supplies, motor control, inverters, and other industrial, manufacturing, and HVAC electrical systems requiring efficient high voltage switching components.

For more advanced semiconductor components, explore EnvMart’s extensive Electronics & Electricals category for Power MOSFETs and discrete semiconductors.