Vishay IRF510 N-Channel Power MOSFET, 5.6 A, 100 V Enhancement Mode, 3-Pin TO-220AB Package IRF510PBF

Vishay IRF510PBF is a high-performance N-Channel power MOSFET designed for use in switching and amplification applications requiring moderate load handling and robust thermal characteristics. This component features a maximum continuous drain current of 5.6 A and a maximum drain-source voltage of 100 V, making it suitable for various industrial and commercial electronics projects.

The device operates in enhancement mode and comes in a 3-pin TO-220AB through-hole package, facilitating easy installation on through-hole PCBs and compatibility with heatsink mounting due to its flat rear tab. It supports a maximum power dissipation of 43 W, which, combined with recommended cooling, enables sustained operation under load.

Key technical characteristics include a forward voltage of 2.5 V, a low on-resistance of 540 mΩ to reduce conduction losses, and a typical gate charge of 8.3 nC for fast switching. The gate source voltage tolerance is ±20 V, allowing flexibility in gate drive arrangements. The operating temperature range extends from -55°C to 175°C junction temperature, thus enabling reliable use in harsh conditions.

Common applications for the IRF510PBF include amplifier circuit output stages, general-purpose switching in power supplies, motor control, and power conversion scenarios. It is also widely used in educational and prototyping projects involving through-hole components and can serve as a transistor replacement in repair tasks.

The device is RoHS compliant and manufactured in China, adhering to environmental and quality standards. The precise dimensions (length 10.41 mm, height 9.01 mm, width 4.7 mm) and pin count (3) conform to TO-220AB package norms, simplifying integration and thermal management with standard heatsinks.

The device operates in enhancement mode suitable for switching and amplification. Maximum power dissipation rated at 43 W supports moderate power applications. Low on-resistance of 540 mΩ reduces conduction losses for efficient performance.

Wide operating temperature range from -55°C to 175°C ensures reliability in demanding environments. Standard TO-220AB package allows easy mounting and thermal interfacing with heatsinks. Typical gate charge of 8.3 nC enables fast switching response.

Gate voltage tolerance of ±20 V accommodates common drive levels. Ideal for amplifier circuit output, general switching, motor control, and power conversion. This component is RoHS compliant and manufactured in China. Explore more products in the Power MOSFET category at EnvMart for a wide selection of semiconductor components optimized for industrial and electronic applications.