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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF840APBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF840A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 2V |
| N-channel MOSFET,IRF840A 8A 500VBrand | Vishay |
Vishay IRF840APBF is a N-Channel Power MOSFET designed for industrial high-voltage power switching applications. This enhancement mode device supports a maximum continuous drain current of 8 A and can withstand a maximum drain-source voltage of 500 V. Featuring a maximum power dissipation of 125 W, it is suitable for substantial power-handling requirements in robust electrical circuits.
The device is housed in a TO-220AB package, enabling straightforward through-hole mounting and efficient heat dissipation with direct heatsink fastening. It operates effectively in temperatures ranging from -55°C to 150°C, making it suitable for demanding industrial environments.
Key electrical characteristics include a maximum drain-source resistance of 850 milliohms, minimizing conduction losses, and a typical gate charge of 38 nanocoulombs, allowing optimized switching speeds and reduced energy loss during transitions. The maximum gate-source voltage is ±30 V, which protects gate oxide integrity for long-term reliability.
Applications span industrial high-voltage converters and inverters, switch-mode power supplies, motor control stages requiring 8 A switching, and power management in laboratory test equipment. Its robust thermal and electrical ratings make it an ideal replacement or upgrade component for compatible TO-220AB based Power MOSFETs.
Maximum continuous drain current: 8 A. Maximum drain-source voltage: 500 V. Maximum power dissipation: 125 W. Package: TO-220AB. Gate charge: 38 nC typical. Operating temperature: -55°C to 150°C. Maximum gate-source voltage: ±30 V.
RoHS compliant. Manufactured in China. 3-pin count with through-hole mounting. Explore Vishay power semiconductors and industrial MOSFETs at EnvMart for reliable high-performance components tailored to diverse electrical engineering and manufacturing needs.
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