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Infineon N-Channel Power MOSFET PQFN 6-Pin, 25 V, 55 A, 2.4 mΩ Rds(on), 171 W Power Dissipation ISK024NE2LM5

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model ISK024NE2LM5
Mount Type Surface
Series ISK
Maximum Operating Temperature 150°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 6
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 55A
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 2.4mΩ
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 810mV

Key Features

  • Optimized for high efficiency with a low RDS(on) of 2.4 milliohms.
  • Maximum power dissipation rating of 171 watts suitable for demanding power applications.
  • Operating temperature range from -55°C to 150°C ensures reliability under harsh conditions.
  • Designed with a typical gate charge of 80 nC for fast switching performance.
  • Supports a maximum gate-source voltage of 30 volts for robust control.
  • Features a compact PQFN 2x2 package for space-saving PCB layouts.
  • 100% avalanche tested for enhanced ruggedness and system safety.
  • Compliant with RoHS and automotive standard AEC-Q101 for quality assurance.

Product Description

The Infineon ISK024NE2LM5 is a high-performance N-channel Power MOSFET engineered for efficient power management in compact form factors. Rated at 25 V maximum drain-source voltage and 55 A continuous drain current, the device is housed in a small 6-pin PQFN package with a footprint of just 4 mm² making it ideal for space-constrained applications.

Featuring an industry-leading low on-resistance of 2.4 milliohms, this MOSFET significantly reduces conduction losses to improve overall system efficiency. The device supports a maximum power dissipation of 171 watts, enabling it to handle substantial loads without compromising thermal performance.

Engineered for durability, it operates reliably across a wide temperature range from -55°C to 150°C and offers a maximum gate-source voltage of 30 V, ensuring secure switching and control. The typical gate charge of 80 nC allows for rapid switching cycles, suited for DC/DC converters, wireless charging modules, and load switches.

The ISK024NE2LM5 belongs to Infineon’s OptiMOS™ 5 series, which delivers top-tier performance in power electronics for automotive and industrial applications. Its compact PQFN 2x2 mm package enhances thermal resistance and supports miniaturized circuit designs without sacrificing power density.

Additional features include 100% avalanche testing, which guarantees high reliability during transient voltage spikes, and compliance with RoHS directives and automotive standard AEC-Q101, assuring quality and environmental safety.

Optimized for highest performance and power density in a small PQFN package. Industry's lowest RDS(on) in smallest 2x2 mm PQFN form factor. Suitable for wireless charging, load switches, and low power DC/DC converters. Compliant with stringent automotive quality standards.

Compact size facilitates design flexibility in modern electronics manufacturing.

This MOSFET is widely used in industrial, automotive, telecommunications, and consumer electronics sectors where efficient power management and compact design are paramount. It supports applications such as power supplies, DC/DC converters, and energy-efficient switching circuits.

Explore more power semiconductor solutions and related industrial electronic components at EnvMart for tailored system design and integration.

Infineon N-Channel Power MOSFET PQFN 6-Pin, 25 V, 55 A, 2.4 mΩ Rds(on), 171 W Power Dissipation ISK024NE2LM5
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Frequently Asked Questions

The maximum continuous drain current for this model is 55 A.

The maximum drain-source voltage rating is 25 V.

It features a low on-resistance of 2.4 milliohms (Rds(on)).

This model can handle a maximum power dissipation of 171 watts.

The operating temperature range is from -55°C to 150°C.

The typical gate charge is 80 nC at Vgs.

It is housed in a compact PQFN package.

This model has a pin count of 6.

It complies with the automotive standard AEC-Q101.

The maximum gate-source voltage is 30 V.

Yes, it is compliant with RoHS standards.

It is suitable for applications such as DC/DC converters, load switches, and wireless charging modules.

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