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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISK024NE2LM5 |
| Mount Type | Surface |
| Series | ISK |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 810mV |
The Infineon ISK024NE2LM5 is a high-performance N-channel Power MOSFET engineered for efficient power management in compact form factors. Rated at 25 V maximum drain-source voltage and 55 A continuous drain current, the device is housed in a small 6-pin PQFN package with a footprint of just 4 mm² making it ideal for space-constrained applications.
Featuring an industry-leading low on-resistance of 2.4 milliohms, this MOSFET significantly reduces conduction losses to improve overall system efficiency. The device supports a maximum power dissipation of 171 watts, enabling it to handle substantial loads without compromising thermal performance.
Engineered for durability, it operates reliably across a wide temperature range from -55°C to 150°C and offers a maximum gate-source voltage of 30 V, ensuring secure switching and control. The typical gate charge of 80 nC allows for rapid switching cycles, suited for DC/DC converters, wireless charging modules, and load switches.
The ISK024NE2LM5 belongs to Infineon’s OptiMOS™ 5 series, which delivers top-tier performance in power electronics for automotive and industrial applications. Its compact PQFN 2x2 mm package enhances thermal resistance and supports miniaturized circuit designs without sacrificing power density.
Additional features include 100% avalanche testing, which guarantees high reliability during transient voltage spikes, and compliance with RoHS directives and automotive standard AEC-Q101, assuring quality and environmental safety.
Optimized for highest performance and power density in a small PQFN package. Industry's lowest RDS(on) in smallest 2x2 mm PQFN form factor. Suitable for wireless charging, load switches, and low power DC/DC converters. Compliant with stringent automotive quality standards.
Compact size facilitates design flexibility in modern electronics manufacturing.
This MOSFET is widely used in industrial, automotive, telecommunications, and consumer electronics sectors where efficient power management and compact design are paramount. It supports applications such as power supplies, DC/DC converters, and energy-efficient switching circuits.
Explore more power semiconductor solutions and related industrial electronic components at EnvMart for tailored system design and integration.
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