DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, Surface Mount, 8-Pin ZXMHC6A07T8TA

DiodesZetex ZXMHC6A07T8TA is a full bridge power MOSFET module combining four Type N and Type P-channel enhancement mode transistors. It is designed for efficient switching with a maximum continuous drain current of 1.8 A and maximum drain-source voltage of 60 V, packaged in an 8-pin surface mount form factor.

This device features a low maximum drain-source resistance at 425 milliohms and a typical gate charge of 3.2 nC, allowing for optimized power consumption and fast switching. Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.6 mm height facilitate integration in tightly constrained PCB designs.

The maximum power dissipation is rated at 1.7 W, supporting operation in environments ranging from -55°C to +150°C, making it suitable for demanding industrial, automotive, and power management applications.

Designed to meet multiple industry standards including J-STD-020, RoHS, AEC-Q101, MIL-STD-202, and UL 94V-0, this MOSFET ensures reliability and compliance in various electronic circuits.

This transistor configuration as a full bridge enables versatile power control implementations. The device includes 4 elements per chip offering integrated complementary switching solutions. Its German country of origin reflects manufacturing quality and standards compliance.

Typical use cases include power switching circuits in automotive electronics, industrial automation, and power converters where compact, efficient, and high-reliability MOSFETs are critical.

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