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Vishay P-Channel Power MOSFET, Enhancement Mode, -12 A Continuous Drain Current, -200 V Drain-Source Voltage IRFP9240PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFP9240PBF
Width 5.31mm
Mount Type Through Hole
Series IRFP9240
Maximum Operating Temperature 150°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id -12A
Maximum Drain Source Voltage Vds -200V
Maximum Drain Source Resistance Rds 500mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 44nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -5V
P-channel MOSFET,IRFP9240 12A 200VBrand Vishay

Key Features

  • Supports a maximum power dissipation of 150W for sustained operation.
  • Features a 3-pin TO-247AC through-hole package suitable for effective heatsinking.
  • Maximum drain-source resistance of 500mΩ minimizes conduction losses under load.
  • Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
  • Typical gate charge of 44nC enables predictable gate-drive performance.
  • Ideal for high-side switching and polarity protection in industrial and DC distribution systems.
  • Maximum gate-source voltage of ±20 V to avoid overstressing gate drive circuits.
  • Robust device suitable for industrial power modules and discrete power stages in converters.

Product Description

Vishay IRFP9240PBF is a high-voltage P-channel power MOSFET designed as an enhancement mode transistor capable of handling continuous drain currents of -12 A and maximum drain-source voltage of -200 V. Packaged in a TO-247AC through-hole form factor, it is optimized for power-management and high-voltage switching applications requiring robust thermal dissipation via heatsinking.

Its low maximum Rds(on) of 500mΩ reduces conduction losses, enhancing efficiency, while the typical gate charge of 44nC ensures predictable gate drive characteristics. This device supports sustained power dissipation of up to 150W and operates reliably across a wide ambient temperature range from -55°C to 150°C, making it ideal for industrial environments including power rail regulation, DC distribution high-side switching, and polarity protection circuits.

The IRFP9240PBF features three electrical pins for drain, gate, and source connections, facilitating standard discrete MOSFET integration. The device's maximum gate-source voltage rating of ±20 V must be respected to prevent gate overstress. Its robust design is applicable for discrete power stages in converters and gate drivers requiring moderate charge handling.

Supports -12 A continuous current and -200 V drain-source voltage ratings. 150 W maximum power dissipation for high power applications. TO-247AC package enables effective heatsinking and mechanical mounting. Enhancement mode for simplified high-side switch designs.

Operating temperature range from -55°C to 150°C. Low maximum Rds(on) at 500mΩ to minimize conduction losses. Typical gate charge of 44nC for stable gate drive performance.

This Power MOSFET is extensively used in industrial power supplies, high-voltage switching applications, and power management modules to ensure reliability and performance under demanding electrical and thermal conditions.

Explore the Electronics & Electricals category for more discrete semiconductors and power management components suitable for your industrial projects.

Vishay P-Channel Power MOSFET, Enhancement Mode, -12 A Continuous Drain Current, -200 V Drain-Source Voltage IRFP9240PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is -12 A.

The maximum drain-source voltage rating is -200 V.

It supports a maximum power dissipation of 150 W for sustained operation.

This model is packaged in a TO-247AC through-hole form factor.

The operating temperature range is from -55°C to 150°C.

The maximum gate-source voltage is ±20 V.

The typical gate charge is 44 nC.

The maximum drain-source resistance is 500 mΩ.

This model has three electrical pins for drain, gate, and source connections.

It features a P-channel type channel.

This device complies with RoHS standards.

It is suitable for high-side switching and polarity protection in industrial and DC distribution systems.

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