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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP9240PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP9240 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -12A |
| Maximum Drain Source Voltage Vds | -200V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5V |
| P-channel MOSFET,IRFP9240 12A 200VBrand | Vishay |
Vishay IRFP9240PBF is a high-voltage P-channel power MOSFET designed as an enhancement mode transistor capable of handling continuous drain currents of -12 A and maximum drain-source voltage of -200 V. Packaged in a TO-247AC through-hole form factor, it is optimized for power-management and high-voltage switching applications requiring robust thermal dissipation via heatsinking.
Its low maximum Rds(on) of 500mΩ reduces conduction losses, enhancing efficiency, while the typical gate charge of 44nC ensures predictable gate drive characteristics. This device supports sustained power dissipation of up to 150W and operates reliably across a wide ambient temperature range from -55°C to 150°C, making it ideal for industrial environments including power rail regulation, DC distribution high-side switching, and polarity protection circuits.
The IRFP9240PBF features three electrical pins for drain, gate, and source connections, facilitating standard discrete MOSFET integration. The device's maximum gate-source voltage rating of ±20 V must be respected to prevent gate overstress. Its robust design is applicable for discrete power stages in converters and gate drivers requiring moderate charge handling.
Supports -12 A continuous current and -200 V drain-source voltage ratings. 150 W maximum power dissipation for high power applications. TO-247AC package enables effective heatsinking and mechanical mounting. Enhancement mode for simplified high-side switch designs.
Operating temperature range from -55°C to 150°C. Low maximum Rds(on) at 500mΩ to minimize conduction losses. Typical gate charge of 44nC for stable gate drive performance.
This Power MOSFET is extensively used in industrial power supplies, high-voltage switching applications, and power management modules to ensure reliability and performance under demanding electrical and thermal conditions.
Explore the Electronics & Electricals category for more discrete semiconductors and power management components suitable for your industrial projects.
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