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DiodesZetex N-Channel MOSFET 600 mA 60 V Enhancement 3-Pin TO-92 ZVN4206AVSTZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVN4206AVSTZ |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 600mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Operates at enhancement mode for reliable switching performance.
- Maximum power dissipation of 700 mW supports moderate power applications.
- Durable TO-92 through-hole mounting package with 3 pins, ideal for prototyping and PCB assembly.
- Wide operating temperature range from -55°C to 150°C ensures stability in harsh environments.
- Automotive level standards AEC-Q200, AEC-Q101, and AEC-Q100 certified for quality assurance.
- Compact dimensions with 4.77 mm length, 4.01 mm height, and 2.41 mm width for space-efficient designs.
- Low maximum drain-source resistance of 1.5 Ω enhances efficiency.
- Maximum gate-source voltage rating of -20 to +20 V allows flexible gate drive conditions.
Product Description
DiodesZetex ZVN4206AVSTZ is a high-quality N-Channel MOSFET designed for switching and amplification applications in electronic circuits. Rated for a continuous drain current of 600 mA and a drain-source voltage of 60 V, this enhancement mode transistor offers robust performance in a compact 3-Pin TO-92 package.
The device supports moderate power dissipation up to 700 mW, making it suitable for various industrial and automotive electronics uses. Its wide operating temperature range from -55°C to 150°C ensures reliable operation in demanding environments, including automotive and industrial applications.
This MOSFET meets automotive standards including AEC-Q200, AEC-Q101, and AEC-Q100, attesting to its high reliability and suitability for mission-critical tasks.
The compact package dimensions (4.77 mm length, 4.01 mm height, 2.41 mm width) make it optimal for space-limited PCB layouts, and its through-hole mounting style aids in prototyping and easy installation on printed circuit boards.
Typical applications include switching regulators, load switches, signal amplification, and power management circuits in industrial, automotive, and consumer electronic systems. Operates in enhancement mode for efficient switching.
Maximum continuous drain current: 600 mA. Drain-source voltage rating: 60 V. Power dissipation limit: 700 mW. Automotive compliant (AEC-Q200, AEC-Q101, AEC-Q100). Temperature range: -55°C to 150°C. Compact 3-Pin TO-92 package.
Low drain-source resistance: 1.5 Ω maximum. Forward voltage: 1.5 V. Through-hole mounting type. Explore the wide range of semiconductor components available to suit your electronic design and manufacturing requirements here on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the ZVN4206AVSTZ is 600 mA.
The drain-source voltage rating of this MOSFET is 60 V.
This MOSFET has a maximum power dissipation limit of 700 mW.
The operating temperature range for the ZVN4206AVSTZ is from -55°C to 150°C.
The maximum drain-source resistance for this MOSFET is 1.5 Ω.
The dimensions of this MOSFET are 4.77 mm in length, 4.01 mm in height, and 2.41 mm in width.
The ZVN4206AVSTZ uses a through-hole mounting type.
This model is compliant with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100.
The maximum gate-source voltage rating for the ZVN4206AVSTZ is -20 to +20 V.
This MOSFET is suitable for applications such as switching regulators, load switches, signal amplification, and power management circuits.
The channel type of the ZVN4206AVSTZ is N-channel.
The forward voltage for the ZVN4206AVSTZ is 1.5 V.
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