Infineon CoolMOS N-Channel MOSFET 25 A 700 V 3-Pin TO-247 IPW65R090CFD7XKSA1

Infineon's IPW65R090CFD7XKSA1 is a robust CoolMOS N-Channel MOSFET designed for high power applications. Featuring a continuous drain current of 25 A and a maximum drain-source voltage rating of 700 V, this device offers excellent performance in demanding industrial environments.

Constructed with a 3-pin TO-247 package for through-hole mounting, the MOSFET supports efficient heat dissipation with a maximum power dissipation of 127 W. The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for applications such as power servers, telecom equipment, solar inverters, and electric vehicle charging stations.

The CoolMOS technology integrated into this MOSFET allows for outstanding light-load and full-load efficiency, improving system power density and reducing energy losses. With a typical gate charge of 53 nC at Vgs of 5 V, the device supports fast switching operations, while the low drain-source resistance (900 mΩ max) reduces conduction losses.

Additional features include excellent ruggedness for hard commutation and an integrated fast body diode enhancing switching reliability. The compact physical dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width allow for space-efficient PCB layouts.

This component is ideal for industrial, laboratory, manufacturing, and commercial power electronics, contributing to the design of efficient power management and conversion systems. Its performance in high voltage and current applications improves overall system efficiency and reliability.

High continuous drain current capability of 25 amperes. Maximum drain-source voltage rating of 700 volts. TO-247 through-hole mounting with 3-pin configuration. CoolMOS technology for efficient switching and low losses. Maximum power dissipation of 127 watts ensuring robustness.

Operating temperature range from -55°C to 150°C suitable for industrial use. Typical gate charge of 53 nanocoulombs at 5 volts gate drive for fast switching. Low maximum drain-source resistance of 900 milliohms for reduced conduction losses.

Integrated fast body diode enhances switching performance. Compact size suitable for efficient PCB layouts. Explore more Infineon N-Channel MOSFETs and power semiconductor components on EnvMart to design highly efficient electronic systems.