DiodesZetex P-Channel MOSFET 5.7 A 70 V Enhancement Surface Mount TO-252 3-Pin ZXMP7A17KTC

DiodesZetex ZXMP7A17KTC is a high-performance P-Channel MOSFET designed for a wide range of electronic applications requiring reliable switching and amplification. This 3-pin MOSFET is housed in a TO-252 surface mount package characterized by compact dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height, providing efficient board space usage in printed circuit designs.

This MOSFET supports a maximum continuous drain current (Id) of 5.7 A and a maximum drain-source voltage (Vds) of 70 V, making it ideal for medium voltage power switching applications. The enhancement channel mode MOSFET features a maximum drain-source resistance (Rds) of 250 milliohms, ensuring low conduction losses and efficient energy consumption.

With a maximum power dissipation rating of 9.25 W, this device can handle significant heat generation typical in industrial environments. The specified operating temperature range of -55°C to 150°C allows it to perform reliably under harsh environmental conditions.

The device also features a typical gate charge (Qg) of 9.6 nanoCoulombs at gate-source voltage (Vgs), which facilitates fast switching. The maximum gate-source voltage tolerance is ±20 V, providing robust gate protection against voltage spikes. Forward voltage drop (Vf) is rated at -0.85 V, supporting effective conduction during operation.

This MOSFET is well suited for applications in industrial power supplies, switching regulators, DC-DC converters, and motor control circuits. It is designed to meet the rigorous demands of modern electronic systems requiring efficient power control in a small footprint.

This MOSFET supports a maximum continuous drain current of 5.7 A ensuring strong conduction capabilities. Rated for a maximum drain-source voltage of 70 V, suitable for medium voltage circuits. Features an enhancement-mode channel with a low maximum drain-source resistance of 250 mΩ for efficient switching.

Capable of dissipating maximum power of 9.25 W ensuring reliable thermal performance. Designed to operate between -55°C to 150°C making it suitable for demanding industrial conditions. Comes with a compact TO-252 package measuring 6.73 mm length, 6.22 mm width, and 2.39 mm height.

Typical gate charge is 9.6 nC at Vgs, facilitating efficient gate drive performance. Maximum gate-source voltage rating is ±20 V for robust gate protection. Forward voltage is rated at -0.85 V supporting effective conduction in circuits.

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