onsemi PowerTrench N-Channel MOSFET 22 A 60 V Enhancement Mode Surface Mount 8-Pin MLP FDMC86520L

The onsemi FDMC86520L is a PowerTrench N-Channel MOSFET designed for efficient power switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 22 A and a drain-source voltage of 60 V, this device supports a wide range of industrial and commercial applications where robust switching capabilities are required. Its enhancement mode operation ensures controlled conduction characteristics suitable for high-performance power management.

Enclosed in an 8-pin MLP surface mount package, the MOSFET is optimized for compact board layouts and modern electronics assembly processes. With a low maximum drain-source resistance of 11 milliohms, the FDMC86520L minimizes conduction losses and improves overall power efficiency.

The maximum power dissipation rating of 40 W allows this MOSFET to handle medium power loads without overheating. It operates reliably over an extended temperature range from -55°C to 150°C, making it suitable for demanding environments such as industrial machinery, power supplies, and automotive subsystems.

The device's typical gate charge is 45 nC at the specified gate-source voltage, facilitating balanced switching speed and energy consumption. Its gate-source voltage tolerance from -20 V up to +20 V enables stable gate driving in various circuit designs.

Compact physical dimensions of 3.3 mm length and width, with a height of 750 µm, allow for high-density circuit layouts. Although it does not hold specific automotive standards, the FDMC86520L is versatile for numerous applications in industrial, manufacturing, power management, and electronic instrumentation sectors.

The MOSFET is manufactured to high-quality standards, supporting reliability and long operational lifetime in discrete semiconductor applications. The device comes with an 8-pin MLP surface mount package for compact electronic designs.

Features low maximum drain-source resistance for efficient conduction. Supports maximum power dissipation of 40 watts for medium power applications. Wide operating temperature range from -55°C to 150°C for robust performance.

Typical gate charge of 45 nC ensures efficient switching. Gate-source voltage rated from -20 V to +20 V for flexible control. Compact package dimensions of 3.3 mm × 3.3 mm × 0.75 mm height. No automotive-specific certifications, suitable for general power electronics use.

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