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STMicroelectronics MDmesh N-Channel MOSFET 11 A 800 V Enhancement 3-Pin TO-220 STP11NM80
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP11NM80 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 43.6nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 860mV |
Key Features
- Supports a maximum continuous drain current of 11 A.
- Maximum drain-source voltage is rated at 800 V.
- Features an enhancement mode channel for effective switching.
- Low maximum drain-source resistance of 400 mΩ for efficient conduction.
- Maximum power dissipation capability of 150 W.
- Operates reliably between -65°C to 150°C temperature range.
- Compact TO-220 package with 3 pins for ease of mounting.
- Typical gate charge of 43.6 nC at gate-source voltage.
Product Description
STMicroelectronics STP11NM80 MDmesh N-Channel MOSFET is a high-performance semiconductor designed for power management in electronic circuits. Rated for a maximum continuous drain current of 11 A and a drain-source voltage of 800 V, this device offers robust performance for demanding industrial and commercial applications.
Featuring an enhancement mode channel type, the MOSFET ensures precise switching capabilities with a low maximum drain-source resistance of 400 mΩ, minimizing power losses during operation. The device supports a maximum power dissipation of 150 W, making it suitable for high power circuits while maintaining stability across a wide temperature range from -65°C up to 150°C.
This MOSFET comes in a compact 3-pin TO-220 package, optimized for through-hole mounting, providing mechanical reliability and ease of integration into PCB designs. The typical gate charge is 43.6 nC, facilitating efficient gate control and fast switching speeds. Additionally, the forward voltage of 860 mV contributes to reduced conduction losses and improved energy efficiency.
Common applications include power supplies, motor control, industrial automation, and other electronic equipment requiring efficient, reliable switching components. The robust thermal and electrical characteristics make the STP11NM80 ideal for use in industrial, manufacturing, and consumer electronics sectors.
The MDmesh technology by STMicroelectronics brings enhanced performance and reliability to MOSFET devices, combining innovative design and manufacturing processes to meet the strict requirements of modern electronics engineering.
Package Dimensions: Length 10.4 mm, Width 4.6 mm, Height 9.15 mm. Pin Count: 3. Mounting Type: Through Hole. Supports a maximum continuous drain current of 11 A. Maximum drain-source voltage of 800 V. Enhancement mode channel for efficient switching.
Low 400 mΩ drain-source resistance. Maximum power dissipation of 150 W. Wide operating temperature range from -65°C to 150°C. Packaged in TO-220 with 3 pins for reliable mounting. Typical gate charge of 43.6 nC at Vgs. Forward voltage drop of 860 mV for low losses.
Designed for semiconductor power management applications. Explore more STMicroelectronics power semiconductor devices and components at EnvMart for your industrial and electronic project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
This MOSFET is rated for a maximum drain-source voltage of 800 V.
It has a maximum power dissipation capability of 150 W.
The typical gate charge at gate-source voltage is 43.6 nC.
It operates reliably between -65°C to 150°C.
The maximum drain-source resistance is 400 mΩ.
This model comes in a compact TO-220 package with 3 pins for ease of mounting.
The forward voltage drop is 860 mV.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
This MOSFET features an N-channel type for effective switching.
The maximum gate-source voltage is -30 V to +30 V.
It is suitable for applications such as power supplies, motor control, and industrial automation.
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