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Microchip P-Channel MOSFET 2 A 6 V Enhancement 6-Pin SC-70 MIC94053YC6-TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 1mm |
| Length | 2.2mm |
| Model | MIC94053YC6-TR |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | MIC9405 |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 6V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270mW |
| Maximum Gate Source Voltage Vgs | -6V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type P-channel MOSFET with enhancement mode operation.
- Maximum drain-source voltage of 6 V suitable for low-voltage circuits.
- Continuous drain current rated at 2 amperes for efficient load handling.
- Compact 6-pin SC-70 surface-mount package for space-saving designs.
- Low drain-source resistance typical of 180 milliohms for minimal power loss.
- Operating temperature range from -40°C to 150°C ensures durability.
- Maximum power dissipation of 270 milliwatts maintains thermal stability.
- Forward voltage of 1.2 V and maximum gate-source voltage of -6 V.
Product Description
Microchip MIC94053YC6-TR is a Type P-Channel MOSFET designed for low voltage switching and amplification applications in compact electronic devices. This 6-pin SC-70 surface mount component offers a maximum continuous drain current of 2 A with a drain-source voltage of up to 6 V, making it suitable for efficient power management in compact circuits.
Featuring an enhancement channel mode, this MOSFET achieves a low maximum drain-source resistance of 180 milliohms to ensure minimal conduction losses. It operates effectively within a temperature range of -40°C to 150°C, enabling reliable performance in diverse environmental conditions common in industrial and commercial electronics.
The compact dimensions (2.2 mm length, 1.35 mm width, 1 mm height) assist in high-density PCB layouts while supporting power dissipation up to 270 milliwatts to maintain thermal stability during operation. The device is well suited for applications requiring precise switching characteristics with a forward voltage of 1.2 V and a maximum gate-source voltage of -6 V for enhanced circuit protection.
Type P-channel MOSFET with enhancement mode operation. Maximum continuous drain current of 2 amperes for load control. Drain-source voltage rating of 6 volts for low voltage circuits. Low resistance of 180 milliohms reduces energy losses.
Surface mount 6-pin SC-70 package for compact electronic designs. Operational temperature range from -40°C to 150°C for industrial usage. Power dissipation up to 270 milliwatts ensures thermal resilience. Forward voltage of 1.2 V and maximum gate-source voltage of -6 V for safe operation.
Small form factor suitable for high-density PCB assemblies.
This MOSFET is ideal for use in electronics manufacturing, industrial automation, consumer electronics, and power management circuits that require efficient switching. It supports applications such as portable devices, instrumentation, and automotive low voltage controls.
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Frequently Asked Questions
The maximum continuous drain current for the MIC94053YC6-TR is 2 amperes.
This model has a maximum drain-source voltage rating of 6 volts, making it suitable for low-voltage circuits.
The MIC94053YC6-TR features a low maximum drain-source resistance of 180 milliohms, which helps reduce energy losses during operation.
The dimensions of the MIC94053YC6-TR are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
It operates effectively within a temperature range of -40°C to 150°C, allowing reliable performance in various environments.
The maximum power dissipation for the MIC94053YC6-TR is 270 milliwatts, ensuring thermal stability during operation.
The forward voltage of this model is 1.2 volts, which is important for safe operation in circuits.
This MOSFET comes in a compact 6-pin SC-70 surface-mount package, suitable for high-density PCB layouts.
The maximum gate-source voltage for the MIC94053YC6-TR is -6 volts, providing enhanced circuit protection.
This model is suitable for low voltage switching and amplification applications in portable devices, instrumentation, and automotive controls.
The MIC94053YC6-TR utilizes enhancement mode operation, which is typical for P-channel MOSFETs.
The MIC94053YC6-TR is manufactured in India.
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