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DiodesZetex N-Channel MOSFET 12.2 A 40 V Enhancement 3-Pin TO-252 DMN4036LK3-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.39mm
Length 6.73mm
Model DMN4036LK3-13
Width 6.22mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 12.2A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 61mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 8.49W
Typical Gate Charge Qg @ Vgs 9.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 960mV

Key Features

  • This MOSFET utilizes an enhancement mode and is designed with a TO-252 surface mount package.
  • It features a low maximum drain-source resistance of 61 milliohms for efficient conduction.
  • The device operates reliably over a temperature range from -55°C to 150°C.
  • Typical gate charge at Vgs is 9.2 nanocoulombs for fast switching performance.
  • The maximum power dissipation rating is 8.49 watts, supporting robust operation in industrial electronics.
  • Forward voltage drop is 960 millivolts ensuring efficient power handling.
  • 3-pin configuration with automotive standard AEC-Q101 certification.

Product Description

The DiodesZetex DMN4036LK3-13 is an N-Channel Enhancement Mode MOSFET tailored for power management in electronic circuits requiring a maximum continuous drain current of 12.2 A and maximum drain-source voltage of 40 V. Its surface mount TO-252 package offers ease of PCB assembly in industrial and commercial electronic manufacturing.

The device exhibits a low on-resistance of 61 milliohms, which helps improve efficiency in power switching applications such as DC-DC converters, motor control, power supplies, and automotive electronics. With a typical gate charge of 9.2 nC, it supports fast switching speeds necessary for modern power electronics.

Operating reliably from -55°C up to 150°C, this MOSFET also meets automotive standard AEC-Q101, affirming its suitability for automotive electronic systems and harsh environments. The maximum power dissipation limit of 8.49 W ensures thermal stability under continuous load conditions.

The compact physical package (6.73 mm length, 6.22 mm width, 2.39 mm height) makes it well suited for space-constrained layouts. The device includes a 3-pin TO-252 configuration facilitating standardized connections on printed circuit boards.

Key applications for this MOSFET include industrial controls, consumer electronics power circuits, automotive electronics, and embedded systems requiring high-reliability power switching components.

This MOSFET offers a balanced high current capability combined with low conduction losses. Suitable for use in DC motor drives and inverter circuits. Compliance with AEC-Q101 automotive standard ensures high quality and reliability.

Compact TO-252 package supports efficient heat dissipation and ease of integration. Wide operating temperature and robust voltage ratings increase application flexibility. Explore more MOSFET products and other discrete semiconductor components on EnvMart for your industrial, automotive, and general electronic circuit design needs.

DiodesZetex N-Channel MOSFET 12.2 A 40 V Enhancement 3-Pin TO-252 DMN4036LK3-13
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Frequently Asked Questions

The maximum continuous drain current for this MOSFET is 12.2 A.

The maximum drain-source voltage rating is 40 V.

The maximum drain-source resistance is 61 milliohms.

The typical gate charge at Vgs is 9.2 nanocoulombs.

It operates reliably over a temperature range from -55°C to 150°C.

This model comes in a TO-252 surface mount package.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

Yes, it meets the automotive standard AEC-Q101.

The maximum power dissipation rating is 8.49 watts.

The forward voltage drop is 960 millivolts.

This MOSFET uses an N-channel configuration.

It is suitable for applications in industrial controls, consumer electronics power circuits, and automotive electronics.

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