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DiodesZetex P-Channel MOSFET 6 A 40 V Enhancement Mode 6-Pin UDFN DMP4047LFDE-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 580μm
Length 2.05mm
Model DMP4047LFDE-7
Width 2.05mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type UDFN
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 50mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 23.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET features a maximum drain-source voltage of 40 V suitable for low voltage power applications.
  • It operates with an enhancement channel mode and has a typical gate charge of 23.2 nC at a gate voltage of 23 V.
  • The device offers low on-resistance of 50 mΩ for efficient conduction.
  • It comes in a compact 6-pin UDFN surface mount package measuring 2.05 mm by 2.05 mm with a height of 580 μm.
  • Operating temperature range spans from -55°C up to 150°C, making it suitable for automotive and industrial environments.
  • Maximum power dissipation is rated at 2.1 W ensuring robust thermal management.
  • The maximum gate-source voltage rating is from -20 V to +20 V, providing protection against voltage spikes.

Product Description

The DiodesZetex DMP4047LFDE-7 is a high-performance P-Channel MOSFET optimized for power management in electronic and automotive applications. It supports a maximum continuous drain current of 6 A and can withstand drain-source voltages up to 40 V, making it ideal for switching and amplification tasks in compact, surface-mount circuits.

The MOSFET uses an enhancement channel mode to ensure efficient switching and has a low drain-source resistance of 50 mΩ to minimize power loss during operation. Its compact UDFN package with six pins measures 2.05 mm length and width, with a height of just 580 μm, allowing space-saving PCB layouts.

Designed for reliability, it operates across a wide temperature range from -55°C to 150°C, making it suitable for harsh automotive environments and demanding industrial applications. The gate-source voltage tolerance from -20 to +20 V safeguards against voltage stresses.

The maximum power dissipation of 2.1 W ensures the device can manage thermal build-up efficiently. Typical gate charge of 23.2 nC supports fast switching performance without significant energy loss.

This MOSFET is RoHS compliant and meets the stringent AEC-Q101 automotive standard, underlining its quality and suitability for automotive electronics. It is manufactured in China with high-quality semiconductor materials.

This P-Channel MOSFET supports efficient low voltage power management. Compact 6-pin UDFN package ensures ease of surface mount assembly. Wide operating temperature range serves automotive and industrial sectors. Low on-resistance reduces conduction losses for better efficiency.

High gate-source voltage rating protects device integrity under voltage spikes. Maximum power dissipation offers excellent thermal performance. Conforms to AEC-Q101 automotive standards for reliability.

This product is suitable for electronic, automotive, industrial, and power management applications. EnvMart offers this quality semiconductor component to meet technical and efficiency requirements for modern electronics design and manufacturing.

DiodesZetex P-Channel MOSFET 6 A 40 V Enhancement Mode 6-Pin UDFN DMP4047LFDE-7
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Frequently Asked Questions

The maximum continuous drain current for the DiodesZetex DMP4047LFDE-7 is 6 A.

This model has a maximum drain-source voltage rating of 40 V, suitable for low voltage power applications.

The typical gate charge at a gate voltage of 23 V is 23.2 nC.

The UDFN package measures 2.05 mm by 2.05 mm with a height of 580 μm.

It features a low on-resistance of 50 mΩ, which helps in efficient conduction.

The operating temperature range spans from -55°C to 150°C, making it suitable for automotive and industrial environments.

The maximum power dissipation for this MOSFET is rated at 2.1 W.

The maximum gate-source voltage rating is from -20 V to +20 V, providing protection against voltage spikes.

Yes, it is RoHS compliant and meets the AEC-Q101 automotive standard.

This model uses an enhancement channel type for efficient switching performance.

The mount type for the DMP4047LFDE-7 is surface mount, which facilitates easy assembly on PCBs.

The forward voltage for this MOSFET is -1.2 V.

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