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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | DMN6068LK3-13 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | DMN6068LK3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.49W |
| Typical Gate Charge Qg @ Vgs | 10.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.15V |
DiodesZetex DMN6068LK3-13 is a high-performance N-Channel MOSFET transistor designed for switching and amplification in electronic circuits with a maximum continuous drain current of 8.5 A and a drain-source voltage rating of 60 V. Housed in a compact TO-252 surface-mount package with 3 pins, it offers efficient power handling for industrial, automotive, and consumer electronics applications.
This enhancement-mode MOSFET features a low on-resistance of 100 milliohms, reducing power losses and improving efficiency in power management circuits. The device supports a maximum power dissipation of 8.49 W and has a wide operational temperature range from -55°C to 150°C, making it suitable for harsh environments, including automotive uses validated by the AEC-Q101 standard.
The typical gate charge of 10.3 nC at the gate-source voltage enables fast switching speeds, important for PWM-based controllers, DC-DC converters, and motor drivers. The 3-pin TO-252 package offers ease of PCB layout and robust thermal dissipation, with dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height.
This MOSFET is engineered for applications in industrial power supplies, automotive electronics, lighting controls, and general-purpose electronic equipment where reliable switching with efficiency is essential.
Enhancement-mode N-Channel MOSFET with 8.5 A drain current capacity. 60 V maximum drain-source voltage rating. Low Rds(on) resistance of 100 milliohms for efficient conduction. Maximum power dissipation of 8.49 watts supports thermal management.
Wide operating temperature range from -55°C to 150°C. Typical gate charge of 10.3 nC for fast switching. Compact TO-252 package suitable for surface-mount technology. Automotive grade AEC-Q101 compliant device for enhanced reliability.
Physical dimensions allow for versatile PCB design integration.
Explore this MOSFET among DiodesZetex’s semiconductor products on EnvMart for highly efficient electronic component sourcing suitable for diverse industrial and automotive applications.
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