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Vishay IRF840AS N-Channel MOSFET 8 A 500 V Enhancement Mode 3-Pin TO-263 IRF840ASPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF840ASPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | IRF840AS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 2V |
Key Features
- This MOSFET features enhancement mode operation for efficient switching.
- Maximum continuous drain current is rated at 8 amperes.
- Drain-source voltage can withstand up to 500 volts.
- Has a low drain-source resistance of 850 milliohms for minimal power loss.
- Maximum power dissipation is 3.1 watts, suitable for moderate power applications.
- Typical gate charge is 38 nanocoulombs, enabling fast switching.
- Operational temperature range spans from -55°C to 150°C.
- Compact dimensions with length 10.67 mm, width 9.65 mm, and height 4.83 mm.
Product Description
Vishay IRF840ASPBF is a high-performance N-Channel MOSFET designed for power switching and amplification applications. With a maximum continuous drain current of 8 amperes and a drain-source voltage rating of 500 volts, this transistor is suitable for industrial and commercial electronic circuits requiring efficient switching.
This MOSFET operates in enhancement mode, offering reliable control and a low maximum drain-source resistance of 850 milliohms that ensures reduced conduction losses and improved energy efficiency. Its gate charge of 38 nanocoulombs supports rapid switching speeds, beneficial in pulse-width modulation and switching power supplies.
The device is built in a TO-263 package providing surface-mount capability with three pins for ease of integration on printed circuit boards. The compact physical footprint with dimensions of 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height allows for space-saving designs.
Operating temperature ranges from -55°C to 150°C enables use in diverse environmental conditions from industrial temperature extremes to consumer electronics. The Vishay IRF840ASPBF is manufactured in China and supplied as a brand new component, ensuring quality and reliability for new builds and repair projects.
Typical use cases include power management in industrial machinery, automotive electronics, power supplies, lighting control, and general-purpose switching in electronic devices. This MOSFET is well-suited for engineers and designers involved in power electronics and embedded system projects requiring durable and efficient discrete semiconductors.
This MOSFET features enhancement mode operation for efficient switching. Maximum continuous drain current rated at 8 amperes. Drain-source voltage capability of 500 volts. Low drain-source resistance of 850 milliohms minimizes power loss.
Maximum power dissipation of 3.1 watts for moderate power handling. Typical gate charge of 38 nanocoulombs enables fast switching response. Wide operating temperature range from -55°C to 150°C. Compact TO-263 surface mount package with 3 pins.
Manufactured in China, supplied new with guaranteed authenticity. Explore advanced discrete semiconductor solutions and numerous MOSFET options at EnvMart to optimize your electronic designs for performance, size, and reliability.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is rated at 8 amperes.
It can withstand a maximum drain-source voltage of 500 volts.
The low drain-source resistance is rated at 850 milliohms, which helps minimize power loss.
The typical gate charge is 38 nanocoulombs, enabling fast switching capabilities.
The operational temperature range spans from -55°C to 150°C.
This MOSFET has dimensions of 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The IRF840ASPBF comes in a TO-263 package, which is suitable for surface mounting.
The maximum power dissipation is rated at 3.1 watts, suitable for moderate power applications.
This model is an N-Channel MOSFET, designed for power switching and amplification applications.
The maximum gate-source voltage is rated at -30V to +30V.
It is suitable for power management in industrial machinery, automotive electronics, power supplies, and general-purpose switching in electronic devices.
This MOSFET has 3 pins, facilitating its integration on printed circuit boards.
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