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Vishay EF N-Channel Power MOSFET 6.5 A 850 V Depletion Mode 3-Pin TO-220 SiHA17N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SiHA17N80AEF-GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 0.305Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 34W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high-voltage switching and power management applications.
- Supports continuous drain current up to 6.5 A for moderate load requirements.
- Low drain-source resistance of 0.305 ohms reduces conduction losses.
- Typical gate charge of 63 nC lowers switching energy demands.
- Maximum power dissipation is 34 W, enabling effective thermal management.
- Operates reliably in temperature range from -55°C to +150°C.
- Complies with RoHS and automotive AEC-Q101 standards.
- Supplied in a TO-220 surface mount package ideal for heat sinking.
Product Description
Vishay SiHA17N80AEF-GE3 is a high-voltage N-Channel Power MOSFET designed for switching and power management in demanding electronics systems. Featuring a 3-pin TO-220 package and depletion mode channel, this device supports a continuous drain current of 6.5 amps and a maximum drain-source voltage of 850 volts, making it well suited for industrial, automotive, and renewable energy applications.
The MOSFET's low Rds(on) of 0.305 ohms minimizes conduction losses, and a typical gate charge of 63 nC reduces switching energy consumption. It supports power dissipation up to 34 watts with efficient heat sinking via the TO-220 package. The device is capable of operating in extreme temperatures from -55°C to +150°C, which meets AEC-Q101 automotive standards ensuring robustness in regulated automotive environments.
Its depletion mode means the device is normally on without gate drive and requires gate biasing for off-state control. Applications include high-voltage power converters, DC-DC switching stages, industrial motor drives, and power switching in renewable energy interfaces.
High-voltage 850 V drain-source rating for switching applications. 6.5 A continuous drain current rating supports moderate load currents. Low 0.305 Ω resistance reduces conduction losses. Low 63 nC gate charge enhances switching efficiency.
High 34 W power dissipation with TO-220 package. Wide operating temperature range from -55°C to +150°C. Meets RoHS and automotive AEC-Q101 standards. Compact 3-pin TO-220 surface mount package. Suitable for automotive and industrial robust switching needs.
Gate-source voltage limited to 30 V for gate protection.
This Vishay Power MOSFET delivers reliable performance for high-voltage, moderate current power management in industrial, automotive, renewable energy, and power supply applications. Explore similar MOSFET components and electronic semiconductor solutions in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SiHA17N80AEF-GE3 is 6.5 A.
This model has a maximum drain-source voltage rating of 850 V.
The maximum power dissipation for this MOSFET is 34 W, allowing for effective thermal management.
The drain-source resistance (Rds(on)) is 0.305 ohms, which helps reduce conduction losses.
The typical gate charge is 63 nC, which lowers the switching energy demands.
It operates reliably in a temperature range from -55°C to +150°C.
This device is supplied in a TO-220 surface mount package, which is ideal for heat sinking.
It complies with the automotive AEC-Q101 standard, ensuring robustness in regulated environments.
The maximum gate-source voltage is limited to 30 V for gate protection.
This model features an N-channel type with a depletion mode channel.
It is suitable for high-voltage power converters, DC-DC switching stages, industrial motor drives, and power switching in renewable energy interfaces.
The Vishay SiHA17N80AEF-GE3 is manufactured in India.
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