Infineon IPL N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R1K2P7ATMA1

Infineon IPLK80R1K2P7ATMA1 is a high-performance N-Channel MOSFET designed specifically for power electronics applications including flyback converters, adapter chargers, audio switching power supplies, auxiliary power, and industrial power management.

With a maximum continuous drain current of 4.5 A and drain-source voltage rating of 800 V, this MOSFET is housed in the space-saving ThinPAK 5x6 package measuring just 5x6 mm with a low profile height of 1 mm. This compact form factor alongside low parasitic elements enables designers to achieve significant power density improvements in their circuits.

The device delivers up to 0.6% efficiency gains and lowers MOSFET operating temperature by 2 to 8 degrees Celsius compared to predecessor devices and competing alternatives in typical flyback designs. Its best-in-class figure of merit (FOM) consisting of low RDS(on) at 1.2 mΩ and reduced gate charge (80 nC) helps reduce switching losses and improve overall energy efficiency.

Furthermore, the integrated Zener diode ESD protection enhances device robustness and reliability in complex power electronics environments. The MOSFET is also characterized by a very stable gate threshold voltage of approximately 3 V with a tight ±0.5 V variation, facilitating predictable gate drive control.

This part meets stringent AEC-Q101 automotive qualification standards, making it suitable for automotive power management systems. Its operational ambient temperature range spans from -55°C to 150°C ensuring endurance under harsh industrial and automotive conditions.

Low electromagnetic interference (EMI) characteristics make it ideal for noise-sensitive circuits in power management, telecommunications, and industrial electronics. Optimized for flyback converter applications and industrial power supplies.

Compact ThinPAK 5x6 package supports high power density designs. Integrated ESD protection with Zener diode. Automotive qualified to AEC-Q101 standards. Wide operating temperature range from -55°C to 150°C. Low gate charge and low RDS(on) for superior efficiency.

Stable gate threshold voltage with minimal variation. Reduces BOM costs and assembly effort through enhanced design features.

Choose Infineon IPLK80R1K2P7ATMA1 for reliable, efficient, and compact Power MOSFET solutions in industrial, automotive, and consumer electronics applications. Browse more MOSFETs and power management components on EnvMart for your design needs.