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DiodesZetex N-Channel Enhancement Mode MOSFET 3.7 A 100 V PowerDI3333 Surface Mount 8-Pin DMN10H170SFGQ-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 750μm |
| Length | 3.25mm |
| Model | DMN10H170SFGQ-7 |
| Width | 3.25mm |
| Mount Type | Surface |
| Series | DMN10 |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 133mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 26.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- The device supports a maximum continuous drain current of 3.7 A.
- It operates at a maximum drain-source voltage of 100 V for efficient switching.
- The PowerDI3333 package offers a compact surface-mount solution with 8 pins.
- The MOSFET features low on-state resistance of 133 mΩ to minimize power losses.
- It withstands operating temperatures from -55°C to 150°C, suitable for harsh environments.
- Typical gate charge at Vgs is 26.7 nC, allowing fast switching speeds.
- It complies with automotive standard AEC-Q101, ensuring quality and reliability.
- The device has a maximum power dissipation of 2 W and a maximum gate-source voltage of ±20 V.
Product Description
DiodesZetex DMN10H170SFGQ-7 is a N-channel MOSFET in an 8-pin PowerDI3333 surface-mount package, engineered for automotive and industrial applications requiring robust power control and efficient switching.
This MOSFET supports a continuous drain current of 3.7 A and can handle a drain-source voltage up to 100 V. Its low on-resistance of 133 mΩ ensures minimal conduction losses, enhancing power efficiency.
The device is designed for reliable operation in extreme temperature conditions, rated from -55°C to 150°C, making it suitable for harsh automotive environments. The typical gate charge value of 26.7 nC at standard gate voltage enables fast switching performance for dynamic load control.
Compliant with the AEC-Q101 automotive standard, the DMN10H170SFGQ-7 is backed by quality assurance processes and is suitable for motor control, power management, and other automotive power electronics systems.
The compact PowerDI3333 package measures 3.25 mm in length and width with a height of 750 μm, facilitating high-density PCB layouts while maintaining thermal efficiency. The MOSFET supports a maximum power dissipation of 2 W and a gate-source voltage tolerance of ±20 V, providing flexibility in circuit design.
The device supports a maximum continuous drain current of 3.7 A. Maximum drain-source voltage of 100 V suits high voltage switching. Low on-state resistance reduces power loss during conduction. Wide operating temperature range of -55°C to 150°C for durability.
Compact PowerDI3333 8-pin surface mount package. Complies with automotive standard AEC-Q101 for reliability. Typical gate charge of 26.7 nC enables fast switching. Maximum power dissipation of 2 W facilitates thermal management.
Forward voltage drop is approximately 1 V at rated conditions.
Commonly used in industrial, automotive power management, and motor control applications, this MOSFET delivers reliable switching performance with a robust mechanical and thermal profile. Its high voltage and current ratings combined with automotive certification make it an excellent choice for power electronics circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.7 A.
This MOSFET can handle a maximum drain-source voltage of 100 V.
The on-state resistance is 133 mΩ, which helps to minimize power losses during operation.
The typical gate charge at Vgs is 26.7 nC, allowing for fast switching speeds.
The PowerDI3333 package measures 3.25 mm in length and width, with a height of 750 μm.
It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The maximum power dissipation for this MOSFET is 2 W.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability.
This model has 8 pins in its surface-mount configuration.
The maximum gate-source voltage is ±20 V.
This device is an N-channel enhancement mode MOSFET.
It is commonly used in automotive power management and motor control applications.
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