Infineon CoolMOS CSFD N-Channel MOSFET, 360 A, 650 V Enhancement 3-Pin TO-247 IPW60R024CFD7XKSA1

The Infineon IPW60R024CFD7XKSA1 CoolMOS CSFD N-Channel MOSFET is engineered for high efficiency and performance in power electronics applications such as server power supplies, telecommunications, and electric vehicle charging stations. This semiconductor device supports a maximum continuous drain current of 360 A and a drain-source voltage of up to 650 V making it suitable for demanding resonant topologies in switched-mode power supplies (SMPS).

This CoolMOS CSFD series MOSFET features enhancement mode operation with ultrafast body diode characteristics. The device is housed in a TO-247 package with 3 pins optimized for surface mounting. The extremely low drain-source resistance of 24 mΩ minimizes conduction losses thereby improving overall system efficiency.

The MOSFET supports a maximum power dissipation of 320 W and can reliably operate over a wide temperature range from -55°C to 150°C, ensuring robustness in industrial and commercial environments. The typical gate charge at Vgs is 183 nC facilitating reduced switching losses and improved switching speed. With a maximum gate-source voltage rating of 20 V, the device offers excellent control and protection characteristics.

Compact physical dimensions including 16.13 mm length, 21.1 mm width, and 5.21 mm height allow for space-saving designs. The ultra-fast body diode reduces reverse recovery losses up to 69% compared to competitors, enhancing efficiency and thermal performance.

Ideal for applications in industrial power conversion, laboratory power supplies, advanced manufacturing equipment, HVAC systems, and electric mobility solutions, the IPW60R024CFD7XKSA1 MOSFET contributes to reliable and efficient electronic systems.

Explore more Infineon semiconductor solutions and power MOSFET components at EnvMart for optimized power electronics design and innovation. Delivers a maximum continuous drain current of 360 A for robust power handling. Operates at a maximum drain-source voltage of 650 V with enhancement channel mode.

Encapsulated in a 3-pin TO-247 package suitable for surface mount. Features very low on-resistance of 24 mΩ to minimize conduction losses. Supports a maximum power dissipation of 320 W to enable efficient thermal management.

Includes an ultrafast body diode with superior reverse recovery characteristics. Capable of operating in temperatures ranging from -55°C to 150°C ensuring durability. Typical gate charge of 183 nC at Vgs enabling efficient switching performance.

Maximum gate-source voltage rating of 20 V for reliable control. Dimensions are compact with length 16.13 mm, width 21.1 mm and height 5.21 mm. Browse our extensive catalog of Infineon MOSFETs and discrete semiconductors on EnvMart for industrial and commercial electronics excellence.