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Vishay Type P-Channel MOSFET 214 A 40 V Enhancement 8-Pin PowerPAK 1212-8W SQS405CENW-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 3.3mm |
| Model | SQS405CENW-T1_GE3 |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK 1212-8W |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 214A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 197W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for surface mount applications with 8 pins ensuring efficient connectivity.
- Features an enhancement mode channel for precise control in power electronics.
- Maximum drain source resistance (Rds) of 0.02 ohms for low power loss.
- Operates reliably in temperatures ranging from -55°C to 125°C suitable for automotive use.
- Supports maximum gate source voltage of 20 V and typical gate charge of 38 nC.
- Maximum power dissipation rating of 197 W enabling high power density applications.
- Forward voltage of 1.1 V contributes to efficient switching performance.
- Qualified for AEC-Q101 automotive standards ensuring high reliability.
Product Description
The Vishay SQS405CENW-T1_GE3 is a high-performance P-Channel MOSFET designed to operate at a maximum drain source voltage of 40 V and continuous drain current of 214 A. Packaged in the compact 8-Pin PowerPAK 1212-8W surface mount package, it offers high power density with efficient thermal performance.
This enhancement mode device features a very low maximum drain source resistance of 0.02 Ω, leading to reduced conduction losses in switching applications. Operating over a broad temperature range from -55°C to 125°C, it is suitable for demanding automotive environments and harsh industrial conditions.
The device supports a maximum gate source voltage of 20 V and typical gate charge of 38 nC, making it efficient for high-speed switching circuits. It has a forward voltage of 1.1 V enabling efficient power delivery.
Qualification to the AEC-Q101 automotive standard ensures high reliability and long-term performance in automotive systems. The length of the MOSFET body is 3.3 mm, making it suitable for compact layouts in power management and switching designs.
Surface mount 8-Pin PowerPAK 1212-8W package. P-Channel enhancement mode MOSFET for precise control. Continuous drain current rating of 214 A at 40 V drain source voltage. Low Rds(on) of 0.02 Ω for reduced conduction losses.
Operating temperature from -55°C to 125°C for automotive use. Maximum power dissipation of 197 W supports high power density. Typical gate charge of 38 nC for efficient switching. AEC-Q101 qualification for automotive reliability.
Compact device length of 3.3 mm.
This MOSFET is ideal for applications in automotive power control, industrial power supplies, and other high power density environments requiring reliable and efficient switching components. The surface mount design allows easy integration into automated manufacturing processes and compact electronic assemblies.
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Frequently Asked Questions
The maximum continuous drain current for this model is 214 A.
It can handle a maximum drain source voltage of 40 V.
The maximum power dissipation rating is 197 W, enabling high power density applications.
The maximum gate source voltage supported is 20 V.
The typical gate charge is 38 nC.
The maximum drain source resistance (Rds) is 0.02 Ω, which helps reduce conduction losses.
It operates reliably in temperatures ranging from -55°C to 125°C.
This model comes in an 8-Pin PowerPAK 1212-8W surface mount package.
It is qualified for the AEC-Q101 automotive standard, ensuring high reliability.
The forward voltage is 1.1 V, contributing to efficient switching performance.
This device has a pin count of 8.
It is a P-Channel enhancement mode MOSFET, allowing for precise control in power electronics.
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