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Vishay N-Channel MOSFET, 445 A, 30 V Depletion Mode, 4-Pin PowerPAK (8x8L) SQJQ150E-T1_GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Length 6.15mm
Model SQJQ150E-T1_GE3
Width 4.9mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type PowerPAK (8x8L)
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 445A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.0019Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 255W
Typical Gate Charge Qg @ Vgs 43nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • This MOSFET features a low drain-source resistance (Rds) of 0.0019 ohms for high efficiency.
  • Operating temperature ranges from -55°C to a maximum of 125°C allowing robust performance.
  • It supports a maximum power dissipation of 255 W suitable for high power density applications.
  • The device has a maximum gate-source voltage of 20 V and a forward voltage of 1.1 V.
  • Packaging in PowerPAK (8x8L) makes it suitable for surface mount assembly with compact dimensions of 6.15 mm length and 4.9 mm width.

Product Description

Vishay SQJQ150E-T1_GE3 is a high-performance automotive-grade N-Channel MOSFET designed for demanding electronic applications requiring robust current handling and thermal stability. This depletion-mode transistor has a maximum continuous drain current of 445 A and can tolerate a drain-source voltage up to 30 V. Its 4-pin PowerPAK (8x8L) package and surface mount configuration allow efficient PCB integration in compact designs.

The device exhibits a very low drain-source on-resistance of 0.0019 Ω, reducing conduction losses and improving overall system efficiency. With a typical gate charge of 43 nC at gate-source voltage and a maximum power dissipation rating of 255 W, this MOSFET is ideal for high power density applications in automotive and industrial sectors.

Designed to operate reliably between -55°C and 125°C, it meets automotive AEC-Q101 standards, ensuring quality and durability in harsh environments. The maximum gate-source voltage is 20 V, allowing controlled switching behaviour, while the forward voltage is rated at 1.1 V.

Its compact dimensions of 6.15 mm length and 4.9 mm width facilitate design flexibility and board space optimization. The PowerPAK package type enhances thermal management, promoting longevity and stable operation under heavy loads.

Low drain-source resistance for efficient conduction. Wide operating temperature range suited for automotive applications. High power dissipation capacity for demanding electronic circuits. Compliant with AEC-Q101 automotive qualification standards.

Compact 4-pin surface mount PowerPAK package for easy PCB installation.

This MOSFET finds applications in automotive electronics, power management, motor control, and industrial automation systems. Explore the Electronics & Electricals category at EnvMart for more advanced semiconductor components.

Vishay N-Channel MOSFET, 445 A, 30 V Depletion Mode, 4-Pin PowerPAK (8x8L) SQJQ150E-T1_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 445 A.

It can tolerate a maximum drain-source voltage of 30 V.

The operating temperature range is from -55°C to 125°C.

The drain-source on-resistance is 0.0019 Ω, which contributes to its efficiency.

This device has a maximum power dissipation capacity of 255 W.

It is packaged in a PowerPAK (8x8L) configuration, suitable for surface mount assembly.

The maximum gate-source voltage is 20 V.

The forward voltage rating is 1.1 V.

The dimensions are 6.15 mm in length and 4.9 mm in width.

It complies with the AEC-Q101 automotive qualification standards.

The typical gate charge at gate-source voltage is 43 nC.

This model is suitable for applications in automotive electronics, power management, motor control, and industrial automation systems.

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