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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 22.74mm |
| Length | 15.8mm |
| Model | NTH4L015N065SC1 |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | SiC Power |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 142A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 12mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 500W |
| Typical Gate Charge Qg @ Vgs | 283nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4.8V |
onsemi NTH4L015N065SC1 SiC Power N-Channel MOSFET is engineered for high-performance power switching and efficient power conversion. It supports a maximum continuous drain current of 142 A and a drain source voltage rating of 650 V, packaged in a robust 4-pin TO-247 form factor suitable for through-hole mounting.
The MOSFET features a low maximum drain source resistance of 12 milliohms, which ensures minimal conduction loss and high efficiency in power electronic circuits. With a maximum power dissipation of 500 W, it supports demanding thermal environments and applications requiring substantial power throughput.
Designed using silicon carbide (SiC) technology, it offers higher switching frequencies and improved reliability compared to traditional silicon MOSFETs. The device operates reliably in a wide temperature range from -55°C up to 175°C, making it suitable for harsh industrial and automotive environments.
The typical gate charge is 283 nC at the gate-source voltage of 22 V max, providing fast switching capabilities. The device forward voltage drop is 4.8 V, which contributes to reduced power losses and thermal stress during operation.
The physical dimensions of the package are 22.74 mm in height, 15.8 mm in length, and 5.2 mm in width, fitting industry-standard boards and designs comfortably.
This SiC Power MOSFET is ideal for industrial electronics, power supplies, inverters, automotive power management, and other applications demanding high efficiency and thermal performance.
The device has a maximum continuous drain current of 142 A. It supports a maximum drain source voltage of 650 V with low resistance of 12 milliohms. Operates under wide temperatures from -55°C to 175°C with a maximum power dissipation of 500 W.
Typical gate charge of 283 nC at Vgs enhances switching performance. Compact 4-pin TO-247 package designed for through-hole mounting. Utilizes SiC technology for superior efficiency and reliability. Suitable for industrial power control, automotive, and semiconductor usage.
Explore the extensive range of onsemi power MOSFETs and semiconductor components available at EnvMart for your next high-performance electronics design.
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