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onsemi SiC Power N-Channel MOSFET 142 A 650 V 4-Pin TO-247 NTH4L015N065SC1

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 22.74mm
Length 15.8mm
Model NTH4L015N065SC1
Width 5.2mm
Mount Type Through Hole
Series SiC Power
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 142A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 12mΩ
Channel Mode N
Maximum Power Dissipation Pd 500W
Typical Gate Charge Qg @ Vgs 283nC
Maximum Gate Source Voltage Vgs 22V
Forward Voltage Vf 4.8V

Key Features

  • The device features a low maximum drain source resistance of 12 milliohms ensuring efficient power operation.
  • It supports a maximum power dissipation of 500 W suitable for high power applications.
  • The MOSFET has a wide operating temperature range from -55°C to 175°C for reliable usage.
  • Typical gate charge at Vgs is 283 nC with a maximum gate source voltage of 22 V.
  • The forward voltage drop is 4.8 V enabling reduced conduction losses.
  • Its compact dimensions with a height of 22.74 mm, length of 15.8 mm, and width of 5.2 mm aid PCB design integration.
  • The SiC Power series technology provides superior switching performance and higher reliability than silicon devices.
  • Designed for industrial, power management, automotive, and semiconductor applications.

Product Description

onsemi NTH4L015N065SC1 SiC Power N-Channel MOSFET is engineered for high-performance power switching and efficient power conversion. It supports a maximum continuous drain current of 142 A and a drain source voltage rating of 650 V, packaged in a robust 4-pin TO-247 form factor suitable for through-hole mounting.

The MOSFET features a low maximum drain source resistance of 12 milliohms, which ensures minimal conduction loss and high efficiency in power electronic circuits. With a maximum power dissipation of 500 W, it supports demanding thermal environments and applications requiring substantial power throughput.

Designed using silicon carbide (SiC) technology, it offers higher switching frequencies and improved reliability compared to traditional silicon MOSFETs. The device operates reliably in a wide temperature range from -55°C up to 175°C, making it suitable for harsh industrial and automotive environments.

The typical gate charge is 283 nC at the gate-source voltage of 22 V max, providing fast switching capabilities. The device forward voltage drop is 4.8 V, which contributes to reduced power losses and thermal stress during operation.

The physical dimensions of the package are 22.74 mm in height, 15.8 mm in length, and 5.2 mm in width, fitting industry-standard boards and designs comfortably.

This SiC Power MOSFET is ideal for industrial electronics, power supplies, inverters, automotive power management, and other applications demanding high efficiency and thermal performance.

The device has a maximum continuous drain current of 142 A. It supports a maximum drain source voltage of 650 V with low resistance of 12 milliohms. Operates under wide temperatures from -55°C to 175°C with a maximum power dissipation of 500 W.

Typical gate charge of 283 nC at Vgs enhances switching performance. Compact 4-pin TO-247 package designed for through-hole mounting. Utilizes SiC technology for superior efficiency and reliability. Suitable for industrial power control, automotive, and semiconductor usage.

Explore the extensive range of onsemi power MOSFETs and semiconductor components available at EnvMart for your next high-performance electronics design.

onsemi SiC Power N-Channel MOSFET 142 A 650 V 4-Pin TO-247 NTH4L015N065SC1
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Frequently Asked Questions

The maximum continuous drain current for this model is 142 A.

This MOSFET has a maximum drain source voltage rating of 650 V.

It supports a maximum power dissipation of 500 W.

The operating temperature range is from -55°C to 175°C.

The maximum drain source resistance for this model is 12 milliohms.

The dimensions of the TO-247 package are 22.74 mm in height, 15.8 mm in length, and 5.2 mm in width.

The typical gate charge at a maximum gate-source voltage of 22 V is 283 nC.

The forward voltage drop is 4.8 V.

This device is designed for through-hole mounting.

It is suitable for industrial electronics, power supplies, inverters, automotive power management, and other applications requiring high efficiency and thermal performance.

This model has a pin count of 4.

It belongs to the SiC Power series.

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